Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate

Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate

The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing f...

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Bibliographic Details
Main Authors: Hiroaki Tatsumi, Seongjae Moon, Makoto Takahashi, Takahiro Kozawa, Eiki Tsushima, Hiroshi Nishikawa
Format: Article
Language:English
Published: Elsevier 2024-02-01
Series:Materials & Design
Subjects:
Silicon nitride
Ceramic insulating circuit substrate
Cu–Si3N4 bonding
Bonding interface
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127524000091

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http://www.sciencedirect.com/science/article/pii/S0264127524000091

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