Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing f...
Main Authors: | Hiroaki Tatsumi, Seongjae Moon, Makoto Takahashi, Takahiro Kozawa, Eiki Tsushima, Hiroshi Nishikawa |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2024-02-01
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Series: | Materials & Design |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127524000091 |
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