Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT
A 13 kV class n-channel 4H–SiC trench gate insulated gate bipolar transistor (IGBT) structure is designed based on Silvaco TCAD device simulator tool. The influence of metal/SiC and SiC MOS interface trap states on the static and dynamic characteristics of SiC IGBT devices are systematically studied...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-05-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0144550 |