Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT

Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT

A 13 kV class n-channel 4H–SiC trench gate insulated gate bipolar transistor (IGBT) structure is designed based on Silvaco TCAD device simulator tool. The influence of metal/SiC and SiC MOS interface trap states on the static and dynamic characteristics of SiC IGBT devices are systematically studied...

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Bibliographic Details
Main Authors:	Lingqin Huang, Xinchao Liu, Jing Zhu, Yaohua Wang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-05-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0144550

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