Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors

Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors

We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable GaN bonds for low nitrogen-doping (N-doping), but additionally formed less...

Full description

Bibliographic Details
Main Authors:	Haiting Xie, Yan Zhou, Ying Zhang, Chengyuan Dong
Format:	Article
Language:	English
Published:	Elsevier 2018-12-01
Series:	Results in Physics
Online Access:	http://www.sciencedirect.com/science/article/pii/S2211379718329334

Similar Items

Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors
by: Chia-Chun Yen, et al.
Published: (2020-01-01)

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection
by: Zenghui Fan, et al.
Published: (2022-11-01)

Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
by: Yan Zhou, et al.
Published: (2018-11-01)

Study on Amorphous InGaZnO Thin-Film Transistor Modeling Method Based on Artificial Neural Network
by: Yingtao Xie, et al.
Published: (2023-01-01)

Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-Film Transistors Due to Mobile Sodium
by: Chieh Lo, et al.
Published: (2016-01-01)

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO<sub>x</sub> Passivation Layers
by: Wen Zhang, et al.
Published: (2021-12-01)

Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes
by: Caigui Yang, et al.
Published: (2017-08-01)

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors
by: Honglong Ning, et al.
Published: (2017-01-01)

Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions
by: Jingyu Park, et al.
Published: (2023-03-01)

THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING
by: B. A. Kazarkin, et al.
Published: (2019-12-01)

Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors
by: Dong Geun Lee, et al.
Published: (2020-09-01)

Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration
by: Yuta Fujimoto, et al.
Published: (2015-09-01)

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
by: Chunlan Wang, et al.
Published: (2022-10-01)

Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability
by: J. B. Kim, et al.
Published: (2012-03-01)

The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance
by: Federica Catania, et al.
Published: (2022-01-01)

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
by: Dapeng Wang, et al.
Published: (2018-09-01)

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors
by: Yunping Wang, et al.
Published: (2022-05-01)

InGaZnO thin-film transistors with coplanar control gates for single-device logic applications
by: Hu, Shaogang, et al.
Published: (2018)

Effect of dopant redistribution in gate electrode on surface plasmon resonance in InGaZnO thin-film transistors
by: Hui Su, et al.
Published: (2022-11-01)

Rapid and selective green laser activation of InGaZnO thin-film transistors through metal absorption
by: Jeong Woo Park, et al.
Published: (2021-05-01)

Present status of amorphous In–Ga–Zn–O thin-film transistors
by: Toshio Kamiya, Kenji Nomura and Hideo Hosono
Published: (2010-01-01)

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns
by: Xingzhen Yan, et al.
Published: (2022-12-01)

The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor
by: Chang Liu, et al.
Published: (2021-01-01)

3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories
by: Yuqing Zhang, et al.
Published: (2023-08-01)

Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors
by: Shimin Ge, et al.
Published: (2024-03-01)

Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion
by: So Hee Park, et al.
Published: (2023-08-01)

Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors
by: Changyong Oh, et al.
Published: (2023-09-01)

Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
by: Daichi Koretomo, et al.
Published: (2020-04-01)

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
by: Yiming Liu, et al.
Published: (2021-11-01)

Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments
by: Xindi Xu, et al.
Published: (2023-10-01)

Orders-of-magnitude enhancement in conductivity tuning in InGaZnO thin-film transistors via SiNx passivation and dual-gate modulation
by: ChangDong Chen, et al.
Published: (2019-07-01)

Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer
by: Kyung Min Kim, et al.
Published: (2023-01-01)

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
by: Dapeng Wang, et al.
Published: (2019-05-01)

Integration of microbattery with thin-film electronics for constructing an integrated transparent microsystem based on InGaZnO
by: Bin Jia, et al.
Published: (2023-09-01)

Improved Performance of InGaZnO Thin-Film Transistor With Ti Incorporation Into La<sub>2</sub>O<sub>3</sub> Gate Dielectric
by: J. Q. Song, et al.
Published: (2021-01-01)

Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films
by: Hyo-Jun Joo, et al.
Published: (2020-08-01)

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes
by: Shiben Hu, et al.
Published: (2018-03-01)

Physical characterization of amorphous In-Ga-Zn-O thin-film transistors with direct-contact asymmetric graphene electrode
by: Jaewook Jeong, et al.
Published: (2014-09-01)

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
by: Jaewook Jeong, et al.
Published: (2016-08-01)

Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors
by: Joong-Won Shin, et al.
Published: (2017-07-01)