Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially...
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| Format: | Article |
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MDPI AG
2021-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/11/22/10720 |
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| author | Abdelhamid Amar Bouchaïb Radi Hami El Abdelkhalak |
| author_facet | Abdelhamid Amar Bouchaïb Radi Hami El Abdelkhalak |
| author_sort | Abdelhamid Amar |
| collection | DOAJ |
| description | The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated. |
| first_indexed | 2024-03-10T05:44:33Z |
| format | Article |
| id | doaj.art-d08bccc224a84e4bb864331bb0c9b92c |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T05:44:33Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-d08bccc224a84e4bb864331bb0c9b92c2023-11-22T22:17:54ZengMDPI AGApplied Sciences2076-34172021-11-0111221072010.3390/app112210720Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)Abdelhamid Amar0Bouchaïb Radi1Hami El Abdelkhalak2Department of Sciences, Hassan First University of Settat, FST, LIMII, Route de Casa, Settat 26000, MoroccoDepartment of Sciences, Hassan First University of Settat, FST, LIMII, Route de Casa, Settat 26000, MoroccoLMN, INSA Rouen, Normandie University, 76000 Rouen, FranceThe main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.https://www.mdpi.com/2076-3417/11/22/10720HEMTmodelingreliabilitySORMFORM |
| spellingShingle | Abdelhamid Amar Bouchaïb Radi Hami El Abdelkhalak Electrothermal Reliability of the High Electron Mobility Transistor (HEMT) Applied Sciences HEMT modeling reliability SORM FORM |
| title | Electrothermal Reliability of the High Electron Mobility Transistor (HEMT) |
| title_full | Electrothermal Reliability of the High Electron Mobility Transistor (HEMT) |
| title_fullStr | Electrothermal Reliability of the High Electron Mobility Transistor (HEMT) |
| title_full_unstemmed | Electrothermal Reliability of the High Electron Mobility Transistor (HEMT) |
| title_short | Electrothermal Reliability of the High Electron Mobility Transistor (HEMT) |
| title_sort | electrothermal reliability of the high electron mobility transistor hemt |
| topic | HEMT modeling reliability SORM FORM |
| url | https://www.mdpi.com/2076-3417/11/22/10720 |
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