Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially...

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Bibliographic Details
Main Authors: Abdelhamid Amar, Bouchaïb Radi, Hami El Abdelkhalak
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Applied Sciences
Subjects:
HEMT
modeling
reliability
SORM
FORM
Online Access:https://www.mdpi.com/2076-3417/11/22/10720

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