Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially...
| Autors principals: | , , |
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| Format: | Article |
| Idioma: | English |
| Publicat: |
MDPI AG
2021-11-01
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| Col·lecció: | Applied Sciences |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2076-3417/11/22/10720 |