Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2−xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates usi...

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Bibliographic Details
Main Authors: Antonio B. Mei, Sahar Saremi, Ludi Miao, Matthew Barone, Yongjian Tang, Cyrus Zeledon, Jürgen Schubert, Daniel C. Ralph, Lane W. Martin, Darrell G. Schlom
Format: Article
Language:English
Published: AIP Publishing LLC 2019-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5125809
Description
Summary:We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2−xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics.
ISSN:2166-532X