Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2−xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates usi...

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Main Authors: Antonio B. Mei, Sahar Saremi, Ludi Miao, Matthew Barone, Yongjian Tang, Cyrus Zeledon, Jürgen Schubert, Daniel C. Ralph, Lane W. Martin, Darrell G. Schlom
Format: Article
Language:English
Published: AIP Publishing LLC 2019-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5125809
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author Antonio B. Mei
Sahar Saremi
Ludi Miao
Matthew Barone
Yongjian Tang
Cyrus Zeledon
Jürgen Schubert
Daniel C. Ralph
Lane W. Martin
Darrell G. Schlom
author_facet Antonio B. Mei
Sahar Saremi
Ludi Miao
Matthew Barone
Yongjian Tang
Cyrus Zeledon
Jürgen Schubert
Daniel C. Ralph
Lane W. Martin
Darrell G. Schlom
author_sort Antonio B. Mei
collection DOAJ
description We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2−xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics.
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spelling doaj.art-d098d9e2effd44729966f0b6e4d131a32022-12-21T18:18:36ZengAIP Publishing LLCAPL Materials2166-532X2019-11-01711111101111101-610.1063/1.5125809Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxyAntonio B. Mei0Sahar Saremi1Ludi Miao2Matthew Barone3Yongjian Tang4Cyrus Zeledon5Jürgen Schubert6Daniel C. Ralph7Lane W. Martin8Darrell G. Schlom9Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USADepartment of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USALaboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USAPhysics Department, Cornell University, Ithaca, New York 14853, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USAPeter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyPhysics Department, Cornell University, Ithaca, New York 14853, USADepartment of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USAWe systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2−xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics.http://dx.doi.org/10.1063/1.5125809
spellingShingle Antonio B. Mei
Sahar Saremi
Ludi Miao
Matthew Barone
Yongjian Tang
Cyrus Zeledon
Jürgen Schubert
Daniel C. Ralph
Lane W. Martin
Darrell G. Schlom
Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy
APL Materials
title Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy
title_full Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy
title_fullStr Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy
title_full_unstemmed Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy
title_short Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy
title_sort ferroelectric properties of ion irradiated bismuth ferrite layers grown via molecular beam epitaxy
url http://dx.doi.org/10.1063/1.5125809
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