Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large for ammonothermal growth of bulk GaN, an important...

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Bibliographic Details
Main Authors:	Saskia Schimmel, Daisuke Tomida, Tohru Ishiguro, Yoshio Honda, Shigefusa Chichibu, Hiroshi Amano
Format:	Article
Language:	English
Published:	MDPI AG 2021-03-01
Series:	Crystals
Subjects:	ammonothermal crystal growth numerical simulation gallium nitride computational fluid dynamics conjugated heat transfer
Online Access:	https://www.mdpi.com/2073-4352/11/4/356

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