Sequential Use of Orthogonal Self‐Assembled Monolayers for Area‐Selective Atomic Layer Deposition of Dielectric on Metal
Abstract Although there have been several demonstrations of area‐selective atomic layer deposition (AS‐ALD) of dielectric on dielectric in metal/dielectric patterns, the reverse process of selective dielectric on metal (DoM) is not as well developed due to the challenge of inhibiting only the dielec...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-02-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202202134 |