Tunneling Current Through a Double Quantum Dots System
Electrostatically confined quantum dots in semiconductors hold the promise to achieve high scalability and reliability levels for practical implementation of solid-state qubits where the electrochemical potentials of each quantum dot can be independently controlled by the gate voltages.In this paper...
Main Authors: | Amin Rassekh, Majid Shalchian, Jean-Michel Sallese, Farzan Jazaeri |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2022-01-01
|
Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9828406/ |
Similar Items
-
Simulation of silicon quantum dots with diamond-channel by simplified ME model
by: Xiaohui Zhu, et al.
Published: (2022-07-01) -
Coulomb Blockade in Single And Double Quantum Dots
by: Lee, Patrick A., et al.
Published: (2010) -
Non-equilibrium transport through a model quantum dot: Hartree–Fock approximation and beyond
by: Christian Schiegg, et al.
Published: (2015-01-01) -
Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
by: Amin Rassekh, et al.
Published: (2020-01-01) -
Thermoelectric Inversion in a Resonant Quantum Dot-Cavity System in the Steady-State Regime
by: Nzar Rauf Abdullah, et al.
Published: (2019-05-01)