Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes
Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films with high electrical conductivity and ultraviolet (UV) transparency were achieved by radio frequency magnetron sputtering at room temperature (RT) on quartz glass. The influence...
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MDPI AG
2023-06-01
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author | Kexiong Zhang Lei Feng Lei Wang Jun Zhu Hai Zhang Sihua Ha Jiajun Sun Hongwei Liang Tianpeng Yang |
author_facet | Kexiong Zhang Lei Feng Lei Wang Jun Zhu Hai Zhang Sihua Ha Jiajun Sun Hongwei Liang Tianpeng Yang |
author_sort | Kexiong Zhang |
collection | DOAJ |
description | Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films with high electrical conductivity and ultraviolet (UV) transparency were achieved by radio frequency magnetron sputtering at room temperature (RT) on quartz glass. The influence of annealing temperature and ambient on the structural, electrical and optical properties of Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films were investigated in detail. As the annealing temperature increases, the optical bandgap of the Ga<sub>2</sub>O<sub>3</sub>-laminated films widens. The Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films exhibited good photoelectric performance with a figure-of-merit (FOM) value of 5.83 × 10<sup>−3</sup> Ω<sup>−1</sup>, a sheet resistance of 12.55 Ω/sq, a transmittance of 95.15% at 325 nm, and an average transmittance of 77.56% (250~300 nm). All these results suggest that RT-fabricated Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films show great potential in UV transparent conductive electrodes for UV optoelectronic devices and in flexible electronics. |
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spelling | doaj.art-d0f1f449968b4aefad8ed9bfbda835272023-11-18T18:53:15ZengMDPI AGCrystals2073-43522023-06-01137101810.3390/cryst13071018Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive ElectrodesKexiong Zhang0Lei Feng1Lei Wang2Jun Zhu3Hai Zhang4Sihua Ha5Jiajun Sun6Hongwei Liang7Tianpeng Yang8School of Microelectronics, Dalian University of Technology, Dalian 116602, ChinaSchool of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, ChinaSchool of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, ChinaSchool of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, ChinaCollege of Sciences, Inner Mongolia University of Technology, Hohhot 010051, ChinaCollege of Sciences, Inner Mongolia University of Technology, Hohhot 010051, ChinaSchool of Microelectronics, Dalian University of Technology, Dalian 116602, ChinaSchool of Microelectronics, Dalian University of Technology, Dalian 116602, ChinaEpiTop Optoelectronic Co., Ltd., Maanshan 243071, ChinaGa<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films with high electrical conductivity and ultraviolet (UV) transparency were achieved by radio frequency magnetron sputtering at room temperature (RT) on quartz glass. The influence of annealing temperature and ambient on the structural, electrical and optical properties of Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films were investigated in detail. As the annealing temperature increases, the optical bandgap of the Ga<sub>2</sub>O<sub>3</sub>-laminated films widens. The Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films exhibited good photoelectric performance with a figure-of-merit (FOM) value of 5.83 × 10<sup>−3</sup> Ω<sup>−1</sup>, a sheet resistance of 12.55 Ω/sq, a transmittance of 95.15% at 325 nm, and an average transmittance of 77.56% (250~300 nm). All these results suggest that RT-fabricated Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-laminated films show great potential in UV transparent conductive electrodes for UV optoelectronic devices and in flexible electronics.https://www.mdpi.com/2073-4352/13/7/1018Ga<sub>2</sub>O<sub>3</sub>metal/Ga<sub>2</sub>O<sub>3</sub> stacked filmultraviolettransparent and conductive metallic oxides (TCOs) |
spellingShingle | Kexiong Zhang Lei Feng Lei Wang Jun Zhu Hai Zhang Sihua Ha Jiajun Sun Hongwei Liang Tianpeng Yang Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes Crystals Ga<sub>2</sub>O<sub>3</sub> metal/Ga<sub>2</sub>O<sub>3</sub> stacked film ultraviolet transparent and conductive metallic oxides (TCOs) |
title | Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes |
title_full | Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes |
title_fullStr | Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes |
title_full_unstemmed | Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes |
title_short | Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub>-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes |
title_sort | ga sub 2 sub o sub 3 sub ag ga sub 2 sub o sub 3 sub laminated film fabricated at room temperature toward applications in ultraviolet transparent highly conductive electrodes |
topic | Ga<sub>2</sub>O<sub>3</sub> metal/Ga<sub>2</sub>O<sub>3</sub> stacked film ultraviolet transparent and conductive metallic oxides (TCOs) |
url | https://www.mdpi.com/2073-4352/13/7/1018 |
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