Stateful characterization of resistive switching TiO2 with electron beam induced currents
Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states....
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-017-02116-9 |
| _version_ | 1819195695262859264 |
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| author | Brian D. Hoskins Gina C. Adam Evgheni Strelcov Nikolai Zhitenev Andrei Kolmakov Dmitri B. Strukov Jabez J. McClelland |
| author_facet | Brian D. Hoskins Gina C. Adam Evgheni Strelcov Nikolai Zhitenev Andrei Kolmakov Dmitri B. Strukov Jabez J. McClelland |
| author_sort | Brian D. Hoskins |
| collection | DOAJ |
| description | Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states. |
| first_indexed | 2024-12-23T02:16:51Z |
| format | Article |
| id | doaj.art-d0fb653e348142e1b8662ad03c0cfa6e |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-23T02:16:51Z |
| publishDate | 2017-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-d0fb653e348142e1b8662ad03c0cfa6e2022-12-21T18:03:39ZengNature PortfolioNature Communications2041-17232017-12-018111110.1038/s41467-017-02116-9Stateful characterization of resistive switching TiO2 with electron beam induced currentsBrian D. Hoskins0Gina C. Adam1Evgheni Strelcov2Nikolai Zhitenev3Andrei Kolmakov4Dmitri B. Strukov5Jabez J. McClelland6Center for Nanoscale Science and Technology, National Institute of Standards and TechnologyElectrical and Computer Engineering Department, University of California Santa BarbaraCenter for Nanoscale Science and Technology, National Institute of Standards and TechnologyCenter for Nanoscale Science and Technology, National Institute of Standards and TechnologyCenter for Nanoscale Science and Technology, National Institute of Standards and TechnologyElectrical and Computer Engineering Department, University of California Santa BarbaraCenter for Nanoscale Science and Technology, National Institute of Standards and TechnologyOxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states.https://doi.org/10.1038/s41467-017-02116-9 |
| spellingShingle | Brian D. Hoskins Gina C. Adam Evgheni Strelcov Nikolai Zhitenev Andrei Kolmakov Dmitri B. Strukov Jabez J. McClelland Stateful characterization of resistive switching TiO2 with electron beam induced currents Nature Communications |
| title | Stateful characterization of resistive switching TiO2 with electron beam induced currents |
| title_full | Stateful characterization of resistive switching TiO2 with electron beam induced currents |
| title_fullStr | Stateful characterization of resistive switching TiO2 with electron beam induced currents |
| title_full_unstemmed | Stateful characterization of resistive switching TiO2 with electron beam induced currents |
| title_short | Stateful characterization of resistive switching TiO2 with electron beam induced currents |
| title_sort | stateful characterization of resistive switching tio2 with electron beam induced currents |
| url | https://doi.org/10.1038/s41467-017-02116-9 |
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