High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium
Before lower purity, lower cost silicon (Si) materials, such as compensated Si, can play a role in the terawatt-level (TW) capacity of photovoltaics, a better understanding of the fundamental properties of impurities in compensated Si is essential. In this work, high-resolution photoluminescence (PL...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-12-01
|
| Series: | Journal of Science: Advanced Materials and Devices |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2468217923000989 |
| _version_ | 1797387827857588224 |
|---|---|
| author | Tarek O. Abdul Fattah Janet Jacobs Vladimir P. Markevich Nikolay V. Abrosimov Matthew P. Halsall Iain F. Crowe Anthony R. Peaker |
| author_facet | Tarek O. Abdul Fattah Janet Jacobs Vladimir P. Markevich Nikolay V. Abrosimov Matthew P. Halsall Iain F. Crowe Anthony R. Peaker |
| author_sort | Tarek O. Abdul Fattah |
| collection | DOAJ |
| description | Before lower purity, lower cost silicon (Si) materials, such as compensated Si, can play a role in the terawatt-level (TW) capacity of photovoltaics, a better understanding of the fundamental properties of impurities in compensated Si is essential. In this work, high-resolution photoluminescence (PL) has been used to study the charge carrier radiative recombination through Donor-Acceptor pairs (DAPs) in phosphorus (P) and gallium (Ga) co-doped Si material grown for solar cell applications. The high spectral resolution of our PL system, 0.06 meV, enables us to overcome hitherto prior issues of overlapping spectral lines, giving access to extremely fine structures associated with DA pair (DAP) recombination. Our results confirm the presence of three broad bands and a discrete line structure related to DAP luminescence. The comparison of the discrete line structure due to DAPs recombination in the PL spectra with the theoretically predicted one allows the accurate determination of the Ga ionization energy. Temperature-dependent PL is then used to understand the thermally-induced changes in the DAP luminescence. In particular, we observe that the radiative recombination channel remains active for distant DAPs up to ∼40 K, unlike that for close-range DAPs for which the radiative channel is quenched after only slight increases in the temperature range 10–25 K. Furthermore, the analysis of the temperature dependent changes in the PL intensity of the broad DAP bands up to ∼200 K is used to derive the ionization energy of P donors in compensated Si material. In light of this important information, the significance of using high resolution PL to analyse spectral features in compensated Si is demonstrated. |
| first_indexed | 2024-03-08T22:31:43Z |
| format | Article |
| id | doaj.art-d11487d7d8834392bbe982a949f4bfba |
| institution | Directory Open Access Journal |
| issn | 2468-2179 |
| language | English |
| last_indexed | 2024-03-08T22:31:43Z |
| publishDate | 2023-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Science: Advanced Materials and Devices |
| spelling | doaj.art-d11487d7d8834392bbe982a949f4bfba2023-12-18T04:24:38ZengElsevierJournal of Science: Advanced Materials and Devices2468-21792023-12-0184100629High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and galliumTarek O. Abdul Fattah0Janet Jacobs1Vladimir P. Markevich2Nikolay V. Abrosimov3Matthew P. Halsall4Iain F. Crowe5Anthony R. Peaker6Photon Science Institute and Department of Electrical and Electronics Engineering (EEE), University of Manchester, Manchester, M13 9PL, United Kingdom; Corresponding author.Photon Science Institute and Department of Electrical and Electronics Engineering (EEE), University of Manchester, Manchester, M13 9PL, United KingdomPhoton Science Institute and Department of Electrical and Electronics Engineering (EEE), University of Manchester, Manchester, M13 9PL, United KingdomLeibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Straᶔe 2, 12489 Berlin, GermanyPhoton Science Institute and Department of Electrical and Electronics Engineering (EEE), University of Manchester, Manchester, M13 9PL, United KingdomPhoton Science Institute and Department of Electrical and Electronics Engineering (EEE), University of Manchester, Manchester, M13 9PL, United KingdomPhoton Science Institute and Department of Electrical and Electronics Engineering (EEE), University of Manchester, Manchester, M13 9PL, United KingdomBefore lower purity, lower cost silicon (Si) materials, such as compensated Si, can play a role in the terawatt-level (TW) capacity of photovoltaics, a better understanding of the fundamental properties of impurities in compensated Si is essential. In this work, high-resolution photoluminescence (PL) has been used to study the charge carrier radiative recombination through Donor-Acceptor pairs (DAPs) in phosphorus (P) and gallium (Ga) co-doped Si material grown for solar cell applications. The high spectral resolution of our PL system, 0.06 meV, enables us to overcome hitherto prior issues of overlapping spectral lines, giving access to extremely fine structures associated with DA pair (DAP) recombination. Our results confirm the presence of three broad bands and a discrete line structure related to DAP luminescence. The comparison of the discrete line structure due to DAPs recombination in the PL spectra with the theoretically predicted one allows the accurate determination of the Ga ionization energy. Temperature-dependent PL is then used to understand the thermally-induced changes in the DAP luminescence. In particular, we observe that the radiative recombination channel remains active for distant DAPs up to ∼40 K, unlike that for close-range DAPs for which the radiative channel is quenched after only slight increases in the temperature range 10–25 K. Furthermore, the analysis of the temperature dependent changes in the PL intensity of the broad DAP bands up to ∼200 K is used to derive the ionization energy of P donors in compensated Si material. In light of this important information, the significance of using high resolution PL to analyse spectral features in compensated Si is demonstrated.http://www.sciencedirect.com/science/article/pii/S2468217923000989Photoluminescence (PL)Silicon solar cellsDonor-acceptor pair (DAP)Ionization energyTemperature-dependent PL |
| spellingShingle | Tarek O. Abdul Fattah Janet Jacobs Vladimir P. Markevich Nikolay V. Abrosimov Matthew P. Halsall Iain F. Crowe Anthony R. Peaker High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium Journal of Science: Advanced Materials and Devices Photoluminescence (PL) Silicon solar cells Donor-acceptor pair (DAP) Ionization energy Temperature-dependent PL |
| title | High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium |
| title_full | High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium |
| title_fullStr | High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium |
| title_full_unstemmed | High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium |
| title_short | High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium |
| title_sort | high resolution photoluminescence study on donor acceptor pair dap recombination in silicon crystals co doped with phosphorous and gallium |
| topic | Photoluminescence (PL) Silicon solar cells Donor-acceptor pair (DAP) Ionization energy Temperature-dependent PL |
| url | http://www.sciencedirect.com/science/article/pii/S2468217923000989 |
| work_keys_str_mv | AT tarekoabdulfattah highresolutionphotoluminescencestudyondonoracceptorpairdaprecombinationinsiliconcrystalscodopedwithphosphorousandgallium AT janetjacobs highresolutionphotoluminescencestudyondonoracceptorpairdaprecombinationinsiliconcrystalscodopedwithphosphorousandgallium AT vladimirpmarkevich highresolutionphotoluminescencestudyondonoracceptorpairdaprecombinationinsiliconcrystalscodopedwithphosphorousandgallium AT nikolayvabrosimov highresolutionphotoluminescencestudyondonoracceptorpairdaprecombinationinsiliconcrystalscodopedwithphosphorousandgallium AT matthewphalsall highresolutionphotoluminescencestudyondonoracceptorpairdaprecombinationinsiliconcrystalscodopedwithphosphorousandgallium AT iainfcrowe highresolutionphotoluminescencestudyondonoracceptorpairdaprecombinationinsiliconcrystalscodopedwithphosphorousandgallium AT anthonyrpeaker highresolutionphotoluminescencestudyondonoracceptorpairdaprecombinationinsiliconcrystalscodopedwithphosphorousandgallium |