Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films
Abstract The rapid development of 2D magnetic materials has opened new possibilities in the field of spintronics. CrTe2, a 2D material with perpendicular magnetic anisotropy (PMA) and ferromagnetic transient temperature near room temperature, holds promise for various applications. However, the unde...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-01-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300646 |
| _version_ | 1797359857546821632 |
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| author | Jin Wang Yongkang Xu Shuanghai Wang Xingze Dai Pengfei Yan Jian Zhou Ruifeng Wang Yongbing Xu Liang He |
| author_facet | Jin Wang Yongkang Xu Shuanghai Wang Xingze Dai Pengfei Yan Jian Zhou Ruifeng Wang Yongbing Xu Liang He |
| author_sort | Jin Wang |
| collection | DOAJ |
| description | Abstract The rapid development of 2D magnetic materials has opened new possibilities in the field of spintronics. CrTe2, a 2D material with perpendicular magnetic anisotropy (PMA) and ferromagnetic transient temperature near room temperature, holds promise for various applications. However, the underlying mechanism responsible for its global magnetism remains unclear. This work focuses on investigating the magneto‐transport properties of ultra‐thin CrTe2 Field Effect Transistor (FET) under the influence of top gate biases. The application of gate voltage ranging from 25 to −15 V tunes its coercivity (HC) and Curie temperature (TC) (from 152 to 191 K). Notably, a linear correlation is observed between the TC and the hole concentration (np1/3) in the CrTe2 film, indicating the involvement of the Ruderman–Kittel–Kasuya–Yosida interaction. This experimental analysis sheds light on the mechanism of the CrTe2’s ferromagnetism and paves the way for future advancements and applications in this material. |
| first_indexed | 2024-03-08T15:29:52Z |
| format | Article |
| id | doaj.art-d1528d87d3ab44cab03a53ab504bb128 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-08T15:29:52Z |
| publishDate | 2024-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-d1528d87d3ab44cab03a53ab504bb1282024-01-10T06:50:59ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-01-01101n/an/a10.1002/aelm.202300646Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin FilmsJin Wang0Yongkang Xu1Shuanghai Wang2Xingze Dai3Pengfei Yan4Jian Zhou5Ruifeng Wang6Yongbing Xu7Liang He8State Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaState Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaState Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaState Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaState Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaState Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaState Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaState Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaState Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Nanjing University Nanjing 210023 ChinaAbstract The rapid development of 2D magnetic materials has opened new possibilities in the field of spintronics. CrTe2, a 2D material with perpendicular magnetic anisotropy (PMA) and ferromagnetic transient temperature near room temperature, holds promise for various applications. However, the underlying mechanism responsible for its global magnetism remains unclear. This work focuses on investigating the magneto‐transport properties of ultra‐thin CrTe2 Field Effect Transistor (FET) under the influence of top gate biases. The application of gate voltage ranging from 25 to −15 V tunes its coercivity (HC) and Curie temperature (TC) (from 152 to 191 K). Notably, a linear correlation is observed between the TC and the hole concentration (np1/3) in the CrTe2 film, indicating the involvement of the Ruderman–Kittel–Kasuya–Yosida interaction. This experimental analysis sheds light on the mechanism of the CrTe2’s ferromagnetism and paves the way for future advancements and applications in this material.https://doi.org/10.1002/aelm.202300646CrTe2curie temperaturegate‐voltageRKKY interaction |
| spellingShingle | Jin Wang Yongkang Xu Shuanghai Wang Xingze Dai Pengfei Yan Jian Zhou Ruifeng Wang Yongbing Xu Liang He Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films Advanced Electronic Materials CrTe2 curie temperature gate‐voltage RKKY interaction |
| title | Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films |
| title_full | Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films |
| title_fullStr | Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films |
| title_full_unstemmed | Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films |
| title_short | Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films |
| title_sort | hole mediated rkky interaction in 2d ferromagnetic crte2 ultra thin films |
| topic | CrTe2 curie temperature gate‐voltage RKKY interaction |
| url | https://doi.org/10.1002/aelm.202300646 |
| work_keys_str_mv | AT jinwang holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms AT yongkangxu holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms AT shuanghaiwang holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms AT xingzedai holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms AT pengfeiyan holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms AT jianzhou holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms AT ruifengwang holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms AT yongbingxu holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms AT lianghe holemediatedrkkyinteractionin2dferromagneticcrte2ultrathinfilms |