Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process
Optical modulators for optical interconnects require a small size, small voltage, high speed and wide working spectrum. For this purpose, we developed Si slow-light Mach-Zehnder modulators via a 180 nm complementary metal-oxide-semiconductor process. We employed 200 μm lattice-shifted photonic cryst...
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| Format: | Article |
| Language: | English |
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MDPI AG
2016-04-01
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| Series: | Photonics |
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| Online Access: | http://www.mdpi.com/2304-6732/3/2/17 |
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| author | Yosuke Hinakura Yosuke Terada Takuya Tamura Toshihiko Baba |
| author_facet | Yosuke Hinakura Yosuke Terada Takuya Tamura Toshihiko Baba |
| author_sort | Yosuke Hinakura |
| collection | DOAJ |
| description | Optical modulators for optical interconnects require a small size, small voltage, high speed and wide working spectrum. For this purpose, we developed Si slow-light Mach-Zehnder modulators via a 180 nm complementary metal-oxide-semiconductor process. We employed 200 μm lattice-shifted photonic crystal waveguides with interleaved p-n junctions as phase shifters. The group index spectrum of slow light was almost flat at ng ≈ 20 but exhibited ±10% fluctuation over a wavelength bandwidth of 20 nm. The cutoff frequency measured in this bandwidth ranged from 15 to 20 GHz; thus, clear open eyes were observed in the 25 Gbps modulation. However, the fluctuation in ng was reflected in the extinction ratio and bit-error rate. For a stable error-free operation, a 1 dB margin is necessary in the extinction ratio. In addition, we constructed a device with varied values of ng and confirmed that the extinction ratio at this speed was enhanced by larger ng up to 60. However, this larger ng reduced the cutoff frequency because of increased phase mismatch between slow light and radio frequency signals. Therefore, ng available for 25 Gbps modulation is limited to up to 40 for the current device design. |
| first_indexed | 2024-04-13T19:39:09Z |
| format | Article |
| id | doaj.art-d158f4c829e944059d1830426715e37d |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-04-13T19:39:09Z |
| publishDate | 2016-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-d158f4c829e944059d1830426715e37d2022-12-22T02:32:56ZengMDPI AGPhotonics2304-67322016-04-01321710.3390/photonics3020017photonics3020017Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor ProcessYosuke Hinakura0Yosuke Terada1Takuya Tamura2Toshihiko Baba3Department of Electrical and Computer Engineering, Yokohama National University, Yokohama 240-8501, JapanDepartment of Electrical and Computer Engineering, Yokohama National University, Yokohama 240-8501, JapanDepartment of Electrical and Computer Engineering, Yokohama National University, Yokohama 240-8501, JapanDepartment of Electrical and Computer Engineering, Yokohama National University, Yokohama 240-8501, JapanOptical modulators for optical interconnects require a small size, small voltage, high speed and wide working spectrum. For this purpose, we developed Si slow-light Mach-Zehnder modulators via a 180 nm complementary metal-oxide-semiconductor process. We employed 200 μm lattice-shifted photonic crystal waveguides with interleaved p-n junctions as phase shifters. The group index spectrum of slow light was almost flat at ng ≈ 20 but exhibited ±10% fluctuation over a wavelength bandwidth of 20 nm. The cutoff frequency measured in this bandwidth ranged from 15 to 20 GHz; thus, clear open eyes were observed in the 25 Gbps modulation. However, the fluctuation in ng was reflected in the extinction ratio and bit-error rate. For a stable error-free operation, a 1 dB margin is necessary in the extinction ratio. In addition, we constructed a device with varied values of ng and confirmed that the extinction ratio at this speed was enhanced by larger ng up to 60. However, this larger ng reduced the cutoff frequency because of increased phase mismatch between slow light and radio frequency signals. Therefore, ng available for 25 Gbps modulation is limited to up to 40 for the current device design.http://www.mdpi.com/2304-6732/3/2/17silicon photonicsoptical interconnectphotonic crystaloptical modulatorsilicon modulatorMach-Zehnder modulator |
| spellingShingle | Yosuke Hinakura Yosuke Terada Takuya Tamura Toshihiko Baba Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process Photonics silicon photonics optical interconnect photonic crystal optical modulator silicon modulator Mach-Zehnder modulator |
| title | Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process |
| title_full | Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process |
| title_fullStr | Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process |
| title_full_unstemmed | Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process |
| title_short | Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process |
| title_sort | wide spectral characteristics of si photonic crystal mach zehnder modulator fabricated by complementary metal oxide semiconductor process |
| topic | silicon photonics optical interconnect photonic crystal optical modulator silicon modulator Mach-Zehnder modulator |
| url | http://www.mdpi.com/2304-6732/3/2/17 |
| work_keys_str_mv | AT yosukehinakura widespectralcharacteristicsofsiphotoniccrystalmachzehndermodulatorfabricatedbycomplementarymetaloxidesemiconductorprocess AT yosuketerada widespectralcharacteristicsofsiphotoniccrystalmachzehndermodulatorfabricatedbycomplementarymetaloxidesemiconductorprocess AT takuyatamura widespectralcharacteristicsofsiphotoniccrystalmachzehndermodulatorfabricatedbycomplementarymetaloxidesemiconductorprocess AT toshihikobaba widespectralcharacteristicsofsiphotoniccrystalmachzehndermodulatorfabricatedbycomplementarymetaloxidesemiconductorprocess |