Ferroelectric Tuning of ZnO Ultraviolet Photodetectors
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultr...
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MDPI AG
2022-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/19/3358 |
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| author | Haowei Xie Chenxu Kang Muhammad Ahsan Iqbal Xiaoliang Weng Kewen Wu Wei Tang Lu Qi Yu-Jia Zeng |
| author_facet | Haowei Xie Chenxu Kang Muhammad Ahsan Iqbal Xiaoliang Weng Kewen Wu Wei Tang Lu Qi Yu-Jia Zeng |
| author_sort | Haowei Xie |
| collection | DOAJ |
| description | The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP<sub>2</sub>S<sub>6</sub> (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 10<sup>4</sup> A/W and 7.17 × 10<sup>11</sup> Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors. |
| first_indexed | 2024-03-09T21:22:06Z |
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| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T21:22:06Z |
| publishDate | 2022-09-01 |
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| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-d15ac03977bb4a33ba5c4fdcdb8705bf2023-11-23T21:18:49ZengMDPI AGNanomaterials2079-49912022-09-011219335810.3390/nano12193358Ferroelectric Tuning of ZnO Ultraviolet PhotodetectorsHaowei Xie0Chenxu Kang1Muhammad Ahsan Iqbal2Xiaoliang Weng3Kewen Wu4Wei Tang5Lu Qi6Yu-Jia Zeng7Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaThe ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP<sub>2</sub>S<sub>6</sub> (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 10<sup>4</sup> A/W and 7.17 × 10<sup>11</sup> Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.https://www.mdpi.com/2079-4991/12/19/3358Fe-FETZnOphotodetectorCuInP<sub>2</sub>S<sub>6</sub>P(VDF-TrFE) |
| spellingShingle | Haowei Xie Chenxu Kang Muhammad Ahsan Iqbal Xiaoliang Weng Kewen Wu Wei Tang Lu Qi Yu-Jia Zeng Ferroelectric Tuning of ZnO Ultraviolet Photodetectors Nanomaterials Fe-FET ZnO photodetector CuInP<sub>2</sub>S<sub>6</sub> P(VDF-TrFE) |
| title | Ferroelectric Tuning of ZnO Ultraviolet Photodetectors |
| title_full | Ferroelectric Tuning of ZnO Ultraviolet Photodetectors |
| title_fullStr | Ferroelectric Tuning of ZnO Ultraviolet Photodetectors |
| title_full_unstemmed | Ferroelectric Tuning of ZnO Ultraviolet Photodetectors |
| title_short | Ferroelectric Tuning of ZnO Ultraviolet Photodetectors |
| title_sort | ferroelectric tuning of zno ultraviolet photodetectors |
| topic | Fe-FET ZnO photodetector CuInP<sub>2</sub>S<sub>6</sub> P(VDF-TrFE) |
| url | https://www.mdpi.com/2079-4991/12/19/3358 |
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