Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions
In this paper we report a study of the effect of vacuum annealing at 400°C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barri...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2016-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4972205 |
| _version_ | 1819160632002347008 |
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| author | J. K. Julin S. Chaudhuri M. Laitinen T. Sajavaara I. J. Maasilta |
| author_facet | J. K. Julin S. Chaudhuri M. Laitinen T. Sajavaara I. J. Maasilta |
| author_sort | J. K. Julin |
| collection | DOAJ |
| description | In this paper we report a study of the effect of vacuum annealing at 400°C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1/f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing is a viable route to improve NIS junction devices after the sample has been fabricated. |
| first_indexed | 2024-12-22T16:59:32Z |
| format | Article |
| id | doaj.art-d16568e46e9c4c2bb2988bb2fde65a4e |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T16:59:32Z |
| publishDate | 2016-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-d16568e46e9c4c2bb2988bb2fde65a4e2022-12-21T18:19:23ZengAIP Publishing LLCAIP Advances2158-32262016-12-01612125026125026-1210.1063/1.4972205031612ADVStability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctionsJ. K. Julin0S. Chaudhuri1M. Laitinen2T. Sajavaara3I. J. Maasilta4Nanoscience Center, Department of Physics, University of Jyvaskyla, P.O. Box 35, FI-40014 Jyvaskyla, FinlandNanoscience Center, Department of Physics, University of Jyvaskyla, P.O. Box 35, FI-40014 Jyvaskyla, FinlandAccelerator Laboratory, Department of Physics, University of Jyvaskyla, P.O. Box 35, FI-40014 Jyvaskyla, FinlandAccelerator Laboratory, Department of Physics, University of Jyvaskyla, P.O. Box 35, FI-40014 Jyvaskyla, FinlandNanoscience Center, Department of Physics, University of Jyvaskyla, P.O. Box 35, FI-40014 Jyvaskyla, FinlandIn this paper we report a study of the effect of vacuum annealing at 400°C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1/f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing is a viable route to improve NIS junction devices after the sample has been fabricated.http://dx.doi.org/10.1063/1.4972205 |
| spellingShingle | J. K. Julin S. Chaudhuri M. Laitinen T. Sajavaara I. J. Maasilta Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions AIP Advances |
| title | Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions |
| title_full | Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions |
| title_fullStr | Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions |
| title_full_unstemmed | Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions |
| title_short | Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions |
| title_sort | stability sub gap current 1 f noise and elemental depth profiling of annealed al mn alox al normal metal insulator superconducting tunnel junctions |
| url | http://dx.doi.org/10.1063/1.4972205 |
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