Electrical properties of InSb p-n junctions prepared by diffusion methods
InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have b...
| Main Author: | |
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2016-10-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n3_2016/P295-298abstr.html |
| _version_ | 1818387546572324864 |
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| author | A.V. Sukach |
| author_facet | A.V. Sukach |
| author_sort | A.V. Sukach |
| collection | DOAJ |
| description | InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process. |
| first_indexed | 2024-12-14T04:11:40Z |
| format | Article |
| id | doaj.art-d1a958f6c75b4c5d92c333eb300b2cf4 |
| institution | Directory Open Access Journal |
| issn | 1560-8034 1605-6582 |
| language | English |
| last_indexed | 2024-12-14T04:11:40Z |
| publishDate | 2016-10-01 |
| publisher | National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
| record_format | Article |
| series | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| spelling | doaj.art-d1a958f6c75b4c5d92c333eb300b2cf42022-12-21T23:17:39ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics.Semiconductor Physics, Quantum Electronics & Optoelectronics1560-80341605-65822016-10-0119329529810.15407/spqeo19.03.295Electrical properties of InSb p-n junctions prepared by diffusion methodsA.V. Sukach01V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, UkraineInSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.http://journal-spqeo.org.ua/n3_2016/P295-298abstr.htmlinsbphotodiodetwo-stage diffusionannealing |
| spellingShingle | A.V. Sukach Electrical properties of InSb p-n junctions prepared by diffusion methods Semiconductor Physics, Quantum Electronics & Optoelectronics insb photodiode two-stage diffusion annealing |
| title | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_full | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_fullStr | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_full_unstemmed | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_short | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_sort | electrical properties of insb p n junctions prepared by diffusion methods |
| topic | insb photodiode two-stage diffusion annealing |
| url | http://journal-spqeo.org.ua/n3_2016/P295-298abstr.html |
| work_keys_str_mv | AT avsukach electricalpropertiesofinsbpnjunctionspreparedbydiffusionmethods |