Temperature-dependent photo-elastic coefficient of silicon at 1550 nm
Abstract This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature ran...
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| Format: | Article |
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Nature Portfolio
2023-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-46819-0 |
| _version_ | 1797630195631390720 |
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| author | Johannes Dickmann Jan Meyer Mika Gaedtke Stefanie Kroker |
| author_facet | Johannes Dickmann Jan Meyer Mika Gaedtke Stefanie Kroker |
| author_sort | Johannes Dickmann |
| collection | DOAJ |
| description | Abstract This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient’s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of $$dn/d\sigma = -2.463 \times 10^{-11}$$ d n / d σ = - 2.463 × 10 - 11 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately $$50\%$$ 50 % . The photo-elastic coefficient’s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors. |
| first_indexed | 2024-03-11T11:04:45Z |
| format | Article |
| id | doaj.art-d1aa1761d0144d7997c32f65f9b7c1ad |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-11T11:04:45Z |
| publishDate | 2023-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-d1aa1761d0144d7997c32f65f9b7c1ad2023-11-12T12:18:03ZengNature PortfolioScientific Reports2045-23222023-11-011311610.1038/s41598-023-46819-0Temperature-dependent photo-elastic coefficient of silicon at 1550 nmJohannes Dickmann0Jan Meyer1Mika Gaedtke2Stefanie Kroker3Institute for Semiconductor Technology, Technical University of BraunschweigInstitute for Semiconductor Technology, Technical University of BraunschweigInstitute for Semiconductor Technology, Technical University of BraunschweigInstitute for Semiconductor Technology, Technical University of BraunschweigAbstract This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient’s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of $$dn/d\sigma = -2.463 \times 10^{-11}$$ d n / d σ = - 2.463 × 10 - 11 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately $$50\%$$ 50 % . The photo-elastic coefficient’s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors.https://doi.org/10.1038/s41598-023-46819-0 |
| spellingShingle | Johannes Dickmann Jan Meyer Mika Gaedtke Stefanie Kroker Temperature-dependent photo-elastic coefficient of silicon at 1550 nm Scientific Reports |
| title | Temperature-dependent photo-elastic coefficient of silicon at 1550 nm |
| title_full | Temperature-dependent photo-elastic coefficient of silicon at 1550 nm |
| title_fullStr | Temperature-dependent photo-elastic coefficient of silicon at 1550 nm |
| title_full_unstemmed | Temperature-dependent photo-elastic coefficient of silicon at 1550 nm |
| title_short | Temperature-dependent photo-elastic coefficient of silicon at 1550 nm |
| title_sort | temperature dependent photo elastic coefficient of silicon at 1550 nm |
| url | https://doi.org/10.1038/s41598-023-46819-0 |
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