Kinetics of growth of thin-films of Co2Si, Ni2Si, WSi2 and VSi2 during a reactive diffusion process

A theoretical approach is developed which describes the growth kinetics of thin films of near noble metal silicide (especially of cobalt silicide (Co2Si) and nickel silicide (Ni2Si)) and refractory metal silicide (particularly of tungsten disilicide (WSi2) and vanadium disilicide (VSi2)) at the inte...

Full description

Bibliographic Details
Main Authors: S.O. Akintunde, P.A. Selyshchev
Format: Article
Language:English
Published: Elsevier 2016-01-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379716000073

Similar Items