Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition
Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were gr...
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| Format: | Article |
| Language: | English |
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Polish Academy of Sciences
2018-06-01
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| Series: | Archives of Metallurgy and Materials |
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| Online Access: | https://journals.pan.pl/Content/106723/PDF/AMM-2018-2-69-Choi.pdf |
| _version_ | 1818489835466260480 |
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| author | Daeho Kim Dong Ha Kim Doh-Hyung Riu Byung Joon Choi |
| author_facet | Daeho Kim Dong Ha Kim Doh-Hyung Riu Byung Joon Choi |
| author_sort | Daeho Kim |
| collection | DOAJ |
| description | Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature. |
| first_indexed | 2024-12-10T17:08:46Z |
| format | Article |
| id | doaj.art-d208a46d0203425a905e10f60a3d8e4f |
| institution | Directory Open Access Journal |
| issn | 2300-1909 |
| language | English |
| last_indexed | 2024-12-10T17:08:46Z |
| publishDate | 2018-06-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | Archives of Metallurgy and Materials |
| spelling | doaj.art-d208a46d0203425a905e10f60a3d8e4f2022-12-22T01:40:22ZengPolish Academy of SciencesArchives of Metallurgy and Materials2300-19092018-06-01vol. 63No 2https://doi.org/10.24425/122443Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer DepositionDaeho KimDong Ha KimDoh-Hyung RiuByung Joon ChoiAmong the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature.https://journals.pan.pl/Content/106723/PDF/AMM-2018-2-69-Choi.pdfatomic layer depositiontin oxidegrowth ratefilm densityoptical band gap |
| spellingShingle | Daeho Kim Dong Ha Kim Doh-Hyung Riu Byung Joon Choi Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition Archives of Metallurgy and Materials atomic layer deposition tin oxide growth rate film density optical band gap |
| title | Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition |
| title_full | Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition |
| title_fullStr | Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition |
| title_full_unstemmed | Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition |
| title_short | Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition |
| title_sort | temperature effect on the growth rate and physical characteristics of sno2 thin films grown by atomic layer deposition |
| topic | atomic layer deposition tin oxide growth rate film density optical band gap |
| url | https://journals.pan.pl/Content/106723/PDF/AMM-2018-2-69-Choi.pdf |
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