Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique
Compressively strained SiGe-On-Insulator (SGOI) made by the Ge-condensation technique is used as a performance booster for ultrathin fully depleted silicon-on-insulator transistor technology. Here, we report on the evolution of the compressive strain in the SiGe film along the formation of local SGO...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5088441 |
| _version_ | 1818146587278311424 |
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| author | Victor Boureau Shay Reboh Daniel Benoit Martin Hÿtch Alain Claverie |
| author_facet | Victor Boureau Shay Reboh Daniel Benoit Martin Hÿtch Alain Claverie |
| author_sort | Victor Boureau |
| collection | DOAJ |
| description | Compressively strained SiGe-On-Insulator (SGOI) made by the Ge-condensation technique is used as a performance booster for ultrathin fully depleted silicon-on-insulator transistor technology. Here, we report on the evolution of the compressive strain in the SiGe film along the formation of local SGOI. For this, experimental maps of lattice strain with nanometer spatial resolution have been obtained by dark-field electron holography and compared to results from numerical models describing the mechanics of the structures. In particular, we report on unexpected strain evolutions when the top semiconductor layer is patterned to fabricate the shallow trench isolations that separate the Si nMOS from the SiGe pMOS areas. Dramatic and long-range relaxation of the compressive SiGe layers occurs, while no extended defects are formed in the crystal. The phenomenon involves relative horizontal displacements between the SiGe layer and the underlying Buried Oxide (BOX). We suggest that the Ge-enrichment of the layer close to this interface by the Ge-condensation technique modifies the SiGe/BOX interface and that strain relaxation results from the propagation of some interfacial defects from the edge to the center of the structure, driven by the shear stress at the interface. |
| first_indexed | 2024-12-11T12:21:43Z |
| format | Article |
| id | doaj.art-d20c911fcc15443092d77389ec94eb4f |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-11T12:21:43Z |
| publishDate | 2019-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-d20c911fcc15443092d77389ec94eb4f2022-12-22T01:07:30ZengAIP Publishing LLCAPL Materials2166-532X2019-04-0174041120041120-610.1063/1.5088441017904APMStrain evolution of SiGe-on-insulator obtained by the Ge-condensation techniqueVictor Boureau0Shay Reboh1Daniel Benoit2Martin Hÿtch3Alain Claverie4CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse, FranceUniversité Grenoble Alpes, CEA, LETI, 38000 Grenoble, FranceSTMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, FranceCEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse, FranceCEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse, FranceCompressively strained SiGe-On-Insulator (SGOI) made by the Ge-condensation technique is used as a performance booster for ultrathin fully depleted silicon-on-insulator transistor technology. Here, we report on the evolution of the compressive strain in the SiGe film along the formation of local SGOI. For this, experimental maps of lattice strain with nanometer spatial resolution have been obtained by dark-field electron holography and compared to results from numerical models describing the mechanics of the structures. In particular, we report on unexpected strain evolutions when the top semiconductor layer is patterned to fabricate the shallow trench isolations that separate the Si nMOS from the SiGe pMOS areas. Dramatic and long-range relaxation of the compressive SiGe layers occurs, while no extended defects are formed in the crystal. The phenomenon involves relative horizontal displacements between the SiGe layer and the underlying Buried Oxide (BOX). We suggest that the Ge-enrichment of the layer close to this interface by the Ge-condensation technique modifies the SiGe/BOX interface and that strain relaxation results from the propagation of some interfacial defects from the edge to the center of the structure, driven by the shear stress at the interface.http://dx.doi.org/10.1063/1.5088441 |
| spellingShingle | Victor Boureau Shay Reboh Daniel Benoit Martin Hÿtch Alain Claverie Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique APL Materials |
| title | Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique |
| title_full | Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique |
| title_fullStr | Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique |
| title_full_unstemmed | Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique |
| title_short | Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique |
| title_sort | strain evolution of sige on insulator obtained by the ge condensation technique |
| url | http://dx.doi.org/10.1063/1.5088441 |
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