Tuning the band topology of GdSb by epitaxial strain
Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of i...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0155218 |
| _version_ | 1797404807763329024 |
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| author | Hadass S. Inbar Dai Q. Ho Shouvik Chatterjee Aaron N. Engel Shoaib Khalid Connor P. Dempsey Mihir Pendharkar Yu Hao Chang Shinichi Nishihaya Alexei V. Fedorov Donghui Lu Makoto Hashimoto Dan Read Anderson Janotti Christopher J. Palmstrøm |
| author_facet | Hadass S. Inbar Dai Q. Ho Shouvik Chatterjee Aaron N. Engel Shoaib Khalid Connor P. Dempsey Mihir Pendharkar Yu Hao Chang Shinichi Nishihaya Alexei V. Fedorov Donghui Lu Makoto Hashimoto Dan Read Anderson Janotti Christopher J. Palmstrøm |
| author_sort | Hadass S. Inbar |
| collection | DOAJ |
| description | Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb(001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). As biaxial strain is tuned from tensile to compressive strain, the gap between the hole and the electron bands dispersed along [001] decreases. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature. |
| first_indexed | 2024-03-09T03:00:24Z |
| format | Article |
| id | doaj.art-d23bdc61ef9747738f524126d1e8ce65 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-03-09T03:00:24Z |
| publishDate | 2023-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-d23bdc61ef9747738f524126d1e8ce652023-12-04T17:26:52ZengAIP Publishing LLCAPL Materials2166-532X2023-11-011111111106111106-910.1063/5.0155218Tuning the band topology of GdSb by epitaxial strainHadass S. Inbar0Dai Q. Ho1Shouvik Chatterjee2Aaron N. Engel3Shoaib Khalid4Connor P. Dempsey5Mihir Pendharkar6Yu Hao Chang7Shinichi Nishihaya8Alexei V. Fedorov9Donghui Lu10Makoto Hashimoto11Dan Read12Anderson Janotti13Christopher J. Palmstrøm14Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USADepartment of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USAElectrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USAMaterials Department, University of California Santa Barbara, Santa Barbara, California 93106, USADepartment of Physics, School of Natural Sciences, National University of Science and Technology, Islamabad 44000, PakistanElectrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USAElectrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USAMaterials Department, University of California Santa Barbara, Santa Barbara, California 93106, USAMaterials Department, University of California Santa Barbara, Santa Barbara, California 93106, USAAdvanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAStanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAStanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAElectrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USADepartment of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USAMaterials Department, University of California Santa Barbara, Santa Barbara, California 93106, USARare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb(001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). As biaxial strain is tuned from tensile to compressive strain, the gap between the hole and the electron bands dispersed along [001] decreases. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.http://dx.doi.org/10.1063/5.0155218 |
| spellingShingle | Hadass S. Inbar Dai Q. Ho Shouvik Chatterjee Aaron N. Engel Shoaib Khalid Connor P. Dempsey Mihir Pendharkar Yu Hao Chang Shinichi Nishihaya Alexei V. Fedorov Donghui Lu Makoto Hashimoto Dan Read Anderson Janotti Christopher J. Palmstrøm Tuning the band topology of GdSb by epitaxial strain APL Materials |
| title | Tuning the band topology of GdSb by epitaxial strain |
| title_full | Tuning the band topology of GdSb by epitaxial strain |
| title_fullStr | Tuning the band topology of GdSb by epitaxial strain |
| title_full_unstemmed | Tuning the band topology of GdSb by epitaxial strain |
| title_short | Tuning the band topology of GdSb by epitaxial strain |
| title_sort | tuning the band topology of gdsb by epitaxial strain |
| url | http://dx.doi.org/10.1063/5.0155218 |
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