Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlO<sub>x</sub> for Crystalline Si Passivation

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlO<sub>x</sub> for Crystalline Si Passivation

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlO<sub>x</sub> layers of different thicknesses and submitted to annealing under va...

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Chi tiết về thư mục
Những tác giả chính: Zhen Zheng, Junyang An, Ruiling Gong, Yuheng Zeng, Jichun Ye, Linwei Yu, Ileana Florea, Pere Roca i Cabarrocas, Wanghua Chen
Định dạng: Bài viết
Ngôn ngữ:English
Được phát hành: MDPI AG 2021-07-01
Loạt:Nanomaterials
Những chủ đề:
Kelvin probe force microscopy
c-Si passivation
surface potential
AlO<sub>x</sub>
SiO<sub>x</sub>
Truy cập trực tuyến:https://www.mdpi.com/2079-4991/11/7/1803

Internet

https://www.mdpi.com/2079-4991/11/7/1803

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