An Analytic Design Approach to Inverse Class-F RF Power Amplifiers
The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the loa...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2020-02-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_168189_2ab1dd10c5eb6522f3b7efa5738c3e34.pdf |
| _version_ | 1797336461049069568 |
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| author | Firas M. Ali Mahmuod H. Al-Muifraje Thamir R. Saeed |
| author_facet | Firas M. Ali Mahmuod H. Al-Muifraje Thamir R. Saeed |
| author_sort | Firas M. Ali |
| collection | DOAJ |
| description | The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals. |
| first_indexed | 2024-03-08T08:54:48Z |
| format | Article |
| id | doaj.art-d29ea1f9ec8d4ac28a42e8520d7f8032 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T08:54:48Z |
| publishDate | 2020-02-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-d29ea1f9ec8d4ac28a42e8520d7f80322024-02-01T07:30:32ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582020-02-01382A21122510.30684/etj.v38i2A.301168189An Analytic Design Approach to Inverse Class-F RF Power AmplifiersFiras M. Ali0Mahmuod H. Al-Muifraje1Thamir R. Saeed2Ph.D. Student, Dept. of Electrical Engineering, University of Technology, 30204@uotechnology.edu.iqAssist. Prof., Dept. of Electrical Engineering, University of Technology, 30207@uotechnology.edu.iqProfessor, Dept. of Electrical Engineering, University of Technology, 50257@uotechnology.edu.iqThe design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.https://etj.uotechnology.edu.iq/article_168189_2ab1dd10c5eb6522f3b7efa5738c3e34.pdfclass-f-1gan hemtharmonic impedanceshigh efficiencyrf power amplifier |
| spellingShingle | Firas M. Ali Mahmuod H. Al-Muifraje Thamir R. Saeed An Analytic Design Approach to Inverse Class-F RF Power Amplifiers Engineering and Technology Journal class-f-1 gan hemt harmonic impedances high efficiency rf power amplifier |
| title | An Analytic Design Approach to Inverse Class-F RF Power Amplifiers |
| title_full | An Analytic Design Approach to Inverse Class-F RF Power Amplifiers |
| title_fullStr | An Analytic Design Approach to Inverse Class-F RF Power Amplifiers |
| title_full_unstemmed | An Analytic Design Approach to Inverse Class-F RF Power Amplifiers |
| title_short | An Analytic Design Approach to Inverse Class-F RF Power Amplifiers |
| title_sort | analytic design approach to inverse class f rf power amplifiers |
| topic | class-f-1 gan hemt harmonic impedances high efficiency rf power amplifier |
| url | https://etj.uotechnology.edu.iq/article_168189_2ab1dd10c5eb6522f3b7efa5738c3e34.pdf |
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