Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge

Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge

Fermi-level pinning (FLP) at the metal/Ge interface makes it difficult to control the Schottky barrier height, which forces an ohmic behavior on p-Ge and a rectifying behavior on n-Ge. This study first demonstrates the rectifying behavior on polycrystalline (poly) p-Ge on a glass substrate, using sp...

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Bibliographic Details
Main Authors: Kenta Moto, Kaoru Toko, Tomonari Takayama, Toshifumi Imajo, Takamitsu Ishiyama, Keisuke Yamamoto
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Low-temperature process
polycrystalline Ge
rectifying contact
Schottky barrier diode
ZrN
Online Access:https://ieeexplore.ieee.org/document/10285304/

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