Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
<p>Abstract</p> <p>Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin d...
Main Authors: | Tian Haitao, Ye Huiqi, Wang Gang, Wang Wenxin, Liu Baoli, Marie Xavier, Hu Changcheng, Wang Wenquan |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2011-01-01
|
Series: | Nanoscale Research Letters |
Online Access: | http://www.nanoscalereslett.com/content/6/1/149 |
Similar Items
-
Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
by: Zhang Xiuwen, et al.
Published: (2011-01-01) -
Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
by: Satoshi Iba, et al.
Published: (2021-09-01) -
Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot
by: Peter Millington-Hotze, et al.
Published: (2023-05-01) -
Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
by: Han Lifen, et al.
Published: (2011-01-01) -
Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells
by: A Balocchi, et al.
Published: (2013-01-01)