Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy
We investigate the quantum confinement effects on excitons in several types of strain-free GaAs/Al<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mrow> <mn>0.3</mn> </mrow> </msub> </semantics&g...
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MDPI AG
2020-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/7/1301 |
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| author | Inah Yeo Doukyun Kim Kyu-Tae Lee Jong Su Kim Jin Dong Song Chul-Hong Park Il Ki Han |
| author_facet | Inah Yeo Doukyun Kim Kyu-Tae Lee Jong Su Kim Jin Dong Song Chul-Hong Park Il Ki Han |
| author_sort | Inah Yeo |
| collection | DOAJ |
| description | We investigate the quantum confinement effects on excitons in several types of strain-free GaAs/Al<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mrow> <mn>0.3</mn> </mrow> </msub> </semantics> </math> </inline-formula>Ga<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mrow> <mn>0.7</mn> </mrow> </msub> </semantics> </math> </inline-formula>As droplet epitaxy (DE) quantum dots (QDs). By performing comparative analyses of energy-dispersive X-ray spectroscopy with the aid of a three-dimensional (3D) envelope-function model, we elucidate the individual quantum confinement characteristics of the QD band structures with respect to their composition profiles and the asymmetries of their geometrical shapes. By precisely controlling the exciton oscillator strength in strain-free QDs, we envisage the possibility of tailoring light-matter interactions to implement fully integrated quantum photonics based on QD single-photon sources (SPSs). |
| first_indexed | 2024-03-10T18:43:00Z |
| format | Article |
| id | doaj.art-d30db3ecea1748e8823a3f25a199dd50 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T18:43:00Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-d30db3ecea1748e8823a3f25a199dd502023-11-20T05:42:47ZengMDPI AGNanomaterials2079-49912020-07-01107130110.3390/nano10071301Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet EpitaxyInah Yeo0Doukyun Kim1Kyu-Tae Lee2Jong Su Kim3Jin Dong Song4Chul-Hong Park5Il Ki Han6Dielectrics and Advanced Matter Physics Research Center, Pusan National University, Busan 46241, KoreaDielectrics and Advanced Matter Physics Research Center, Pusan National University, Busan 46241, KoreaNanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, KoreaDepartment of Physics, Yeungnam University, Gyeonsan 38541, KoreaPost-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, KoreaDielectrics and Advanced Matter Physics Research Center, Pusan National University, Busan 46241, KoreaNanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, KoreaWe investigate the quantum confinement effects on excitons in several types of strain-free GaAs/Al<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mrow> <mn>0.3</mn> </mrow> </msub> </semantics> </math> </inline-formula>Ga<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mrow> <mn>0.7</mn> </mrow> </msub> </semantics> </math> </inline-formula>As droplet epitaxy (DE) quantum dots (QDs). By performing comparative analyses of energy-dispersive X-ray spectroscopy with the aid of a three-dimensional (3D) envelope-function model, we elucidate the individual quantum confinement characteristics of the QD band structures with respect to their composition profiles and the asymmetries of their geometrical shapes. By precisely controlling the exciton oscillator strength in strain-free QDs, we envisage the possibility of tailoring light-matter interactions to implement fully integrated quantum photonics based on QD single-photon sources (SPSs).https://www.mdpi.com/2079-4991/10/7/1301droplet epitaxystrain-free quantum dotTEM-EDS |
| spellingShingle | Inah Yeo Doukyun Kim Kyu-Tae Lee Jong Su Kim Jin Dong Song Chul-Hong Park Il Ki Han Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy Nanomaterials droplet epitaxy strain-free quantum dot TEM-EDS |
| title | Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy |
| title_full | Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy |
| title_fullStr | Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy |
| title_full_unstemmed | Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy |
| title_short | Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy |
| title_sort | comparative chemico physical analyses of strain free gaas al sub 0 3 sub ga sub 0 7 sub as quantum dots grown by droplet epitaxy |
| topic | droplet epitaxy strain-free quantum dot TEM-EDS |
| url | https://www.mdpi.com/2079-4991/10/7/1301 |
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