Growth Mechanism of SmB<sub>6</sub> Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free
SmB<sub>6</sub> nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB<sub>6</sub> nanowires and Ni is t...
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MDPI AG
2019-07-01
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Online Access: | https://www.mdpi.com/2079-4991/9/8/1062 |
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author | Yi Chu Yugui Cui Shaoyun Huang Yingjie Xing Hongqi Xu |
author_facet | Yi Chu Yugui Cui Shaoyun Huang Yingjie Xing Hongqi Xu |
author_sort | Yi Chu |
collection | DOAJ |
description | SmB<sub>6</sub> nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB<sub>6</sub> nanowires and Ni is the most popular catalyst used to initiate the growth of SmB<sub>6</sub> nanowires. Here, we study the effect of growth mechanism on the surface of SmB<sub>6</sub> nanowires synthesized by CVD. Two types of SmB<sub>6</sub> nanowires are obtained when using Ni as the catalyst. In addition to pure SmB<sub>6</sub> nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB<sub>6</sub> nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB<sub>6</sub> nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed. |
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language | English |
last_indexed | 2024-12-10T06:27:28Z |
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spelling | doaj.art-d316620c938346dbb79d49d744e9225a2022-12-22T01:59:10ZengMDPI AGNanomaterials2079-49912019-07-0198106210.3390/nano9081062nano9081062Growth Mechanism of SmB<sub>6</sub> Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-FreeYi Chu0Yugui Cui1Shaoyun Huang2Yingjie Xing3Hongqi Xu4Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, ChinaBeijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, ChinaBeijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, ChinaBeijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, ChinaBeijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, ChinaSmB<sub>6</sub> nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB<sub>6</sub> nanowires and Ni is the most popular catalyst used to initiate the growth of SmB<sub>6</sub> nanowires. Here, we study the effect of growth mechanism on the surface of SmB<sub>6</sub> nanowires synthesized by CVD. Two types of SmB<sub>6</sub> nanowires are obtained when using Ni as the catalyst. In addition to pure SmB<sub>6</sub> nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB<sub>6</sub> nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB<sub>6</sub> nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed.https://www.mdpi.com/2079-4991/9/8/1062nanowiressynthesisCVDtopological insulatorsgrowth mechanism |
spellingShingle | Yi Chu Yugui Cui Shaoyun Huang Yingjie Xing Hongqi Xu Growth Mechanism of SmB<sub>6</sub> Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free Nanomaterials nanowires synthesis CVD topological insulators growth mechanism |
title | Growth Mechanism of SmB<sub>6</sub> Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free |
title_full | Growth Mechanism of SmB<sub>6</sub> Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free |
title_fullStr | Growth Mechanism of SmB<sub>6</sub> Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free |
title_full_unstemmed | Growth Mechanism of SmB<sub>6</sub> Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free |
title_short | Growth Mechanism of SmB<sub>6</sub> Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free |
title_sort | growth mechanism of smb sub 6 sub nanowires synthesized by chemical vapor deposition catalyst assisted and catalyst free |
topic | nanowires synthesis CVD topological insulators growth mechanism |
url | https://www.mdpi.com/2079-4991/9/8/1062 |
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