Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors
Molybdenum disulfide (MoS<sub>2</sub>) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I–V characteristics of field-effec...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-06-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/6/1235 |
| _version_ | 1827736371895205888 |
|---|---|
| author | Huei Chaeng Chin Afiq Hamzah Nurul Ezaila Alias Michael Loong Peng Tan |
| author_facet | Huei Chaeng Chin Afiq Hamzah Nurul Ezaila Alias Michael Loong Peng Tan |
| author_sort | Huei Chaeng Chin |
| collection | DOAJ |
| description | Molybdenum disulfide (MoS<sub>2</sub>) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I–V characteristics of field-effect transistors based on MoS<sub>2</sub>. The study begins by developing a ballistic current equation using a circuit model with two contacts. The transmission probability, which considers both the acoustic and optical mean free path, is then derived. Next, the effect of phonon scattering on the device was examined by including transmission probabilities into the ballistic current equation. According to the findings, the presence of phonon scattering caused a decrease of 43.7% in the ballistic current of the device at room temperature when <i>L</i> = 10 nm. The influence of phonon scattering became more prominent as the temperature increased. In addition, this study also considers the impact of strain on the device. It is reported that applying compressive strain could increase the phonon scattering current by 13.3% at <i>L</i> = 10 nm at room temperature, as evaluated in terms of the electrons’ effective masses. However, the phonon scattering current decreased by 13.3% under the same condition due to the existence of tensile strain. Moreover, incorporating a high-k dielectric to mitigate the impact of scattering resulted in an even greater improvement in device performance. Specifically, at <i>L</i> = 6 nm, the ballistic current was surpassed by 58.4%. Furthermore, the study achieved SS = 68.2 mV/dec using Al<sub>2</sub>O<sub>3</sub> and an on–off ratio of 7.75 × 10<sup>4</sup> using HfO<sub>2</sub>. Finally, the analytical results were validated with previous works, showing comparable agreement with the existing literature. |
| first_indexed | 2024-03-11T02:09:43Z |
| format | Article |
| id | doaj.art-d317f6ca91804734b13b5bcfc0305486 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T02:09:43Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-d317f6ca91804734b13b5bcfc03054862023-11-18T11:40:15ZengMDPI AGMicromachines2072-666X2023-06-01146123510.3390/mi14061235Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect TransistorsHuei Chaeng Chin0Afiq Hamzah1Nurul Ezaila Alias2Michael Loong Peng Tan3Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, MalaysiaFaculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, MalaysiaFaculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, MalaysiaFaculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, MalaysiaMolybdenum disulfide (MoS<sub>2</sub>) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I–V characteristics of field-effect transistors based on MoS<sub>2</sub>. The study begins by developing a ballistic current equation using a circuit model with two contacts. The transmission probability, which considers both the acoustic and optical mean free path, is then derived. Next, the effect of phonon scattering on the device was examined by including transmission probabilities into the ballistic current equation. According to the findings, the presence of phonon scattering caused a decrease of 43.7% in the ballistic current of the device at room temperature when <i>L</i> = 10 nm. The influence of phonon scattering became more prominent as the temperature increased. In addition, this study also considers the impact of strain on the device. It is reported that applying compressive strain could increase the phonon scattering current by 13.3% at <i>L</i> = 10 nm at room temperature, as evaluated in terms of the electrons’ effective masses. However, the phonon scattering current decreased by 13.3% under the same condition due to the existence of tensile strain. Moreover, incorporating a high-k dielectric to mitigate the impact of scattering resulted in an even greater improvement in device performance. Specifically, at <i>L</i> = 6 nm, the ballistic current was surpassed by 58.4%. Furthermore, the study achieved SS = 68.2 mV/dec using Al<sub>2</sub>O<sub>3</sub> and an on–off ratio of 7.75 × 10<sup>4</sup> using HfO<sub>2</sub>. Finally, the analytical results were validated with previous works, showing comparable agreement with the existing literature.https://www.mdpi.com/2072-666X/14/6/1235MoS<sub>2</sub> FETphononacousticopticalmean free pathstrain |
| spellingShingle | Huei Chaeng Chin Afiq Hamzah Nurul Ezaila Alias Michael Loong Peng Tan Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors Micromachines MoS<sub>2</sub> FET phonon acoustic optical mean free path strain |
| title | Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors |
| title_full | Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors |
| title_fullStr | Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors |
| title_full_unstemmed | Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors |
| title_short | Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors |
| title_sort | modeling the impact of phonon scattering with strain effects on the electrical properties of mos sub 2 sub field effect transistors |
| topic | MoS<sub>2</sub> FET phonon acoustic optical mean free path strain |
| url | https://www.mdpi.com/2072-666X/14/6/1235 |
| work_keys_str_mv | AT hueichaengchin modelingtheimpactofphononscatteringwithstraineffectsontheelectricalpropertiesofmossub2subfieldeffecttransistors AT afiqhamzah modelingtheimpactofphononscatteringwithstraineffectsontheelectricalpropertiesofmossub2subfieldeffecttransistors AT nurulezailaalias modelingtheimpactofphononscatteringwithstraineffectsontheelectricalpropertiesofmossub2subfieldeffecttransistors AT michaelloongpengtan modelingtheimpactofphononscatteringwithstraineffectsontheelectricalpropertiesofmossub2subfieldeffecttransistors |