Structural, optical, and electrical characteristics of Ge18Bi4Se78 chalcogenide glass for optoelectronic applications
The melt quenching and thermal evaporation techniques were used to produce the chalcogenide glass Ge18Bi4Se78 powder and thin film samples, respectively. The as-deposited and annealed thin films at (180, 200, 300, 320 °C) are characterized by X-ray diffractometer and scanning electron microscopy. Th...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-12-01
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| Series: | Memories - Materials, Devices, Circuits and Systems |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2773064623000622 |
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| author | S.K. Mohamed M.M. Abd El-Raheem M.M. Wakkad A.M. Abdel Hakeeam H.F. Mohamed |
| author_facet | S.K. Mohamed M.M. Abd El-Raheem M.M. Wakkad A.M. Abdel Hakeeam H.F. Mohamed |
| author_sort | S.K. Mohamed |
| collection | DOAJ |
| description | The melt quenching and thermal evaporation techniques were used to produce the chalcogenide glass Ge18Bi4Se78 powder and thin film samples, respectively. The as-deposited and annealed thin films at (180, 200, 300, 320 °C) are characterized by X-ray diffractometer and scanning electron microscopy. The Urbach tail energy Eu and the optical energy gap Eop are investigated. As well, the Swanepoel method revealed that the refractive index exhibited normal dispersion behavior. In addition, the single oscillator, dispersion energies, the lattice dielectric constant, εL, plasma frequency, ωp, and optical conductivity, σop were all examined. The electrical conductivity and the activation energies for as-deposited and annealed thin films were calculated. Whereas the J-E properties of the as-deposited and annealed films indicated varied ranges of negative differential conductance NDC depending on the annealing temperatures. |
| first_indexed | 2024-03-09T01:25:47Z |
| format | Article |
| id | doaj.art-d31b7e5445a94a67b7caa12427d17a2e |
| institution | Directory Open Access Journal |
| issn | 2773-0646 |
| language | English |
| last_indexed | 2024-03-09T01:25:47Z |
| publishDate | 2023-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Memories - Materials, Devices, Circuits and Systems |
| spelling | doaj.art-d31b7e5445a94a67b7caa12427d17a2e2023-12-10T06:19:25ZengElsevierMemories - Materials, Devices, Circuits and Systems2773-06462023-12-016100085Structural, optical, and electrical characteristics of Ge18Bi4Se78 chalcogenide glass for optoelectronic applicationsS.K. Mohamed0M.M. Abd El-Raheem1M.M. Wakkad2A.M. Abdel Hakeeam3H.F. Mohamed4Corresponding author.; Physics Department, Faculty of Sciences, Sohag University, Sohag 82524, EgyptPhysics Department, Faculty of Sciences, Sohag University, Sohag 82524, EgyptPhysics Department, Faculty of Sciences, Sohag University, Sohag 82524, EgyptPhysics Department, Faculty of Sciences, Sohag University, Sohag 82524, EgyptPhysics Department, Faculty of Sciences, Sohag University, Sohag 82524, EgyptThe melt quenching and thermal evaporation techniques were used to produce the chalcogenide glass Ge18Bi4Se78 powder and thin film samples, respectively. The as-deposited and annealed thin films at (180, 200, 300, 320 °C) are characterized by X-ray diffractometer and scanning electron microscopy. The Urbach tail energy Eu and the optical energy gap Eop are investigated. As well, the Swanepoel method revealed that the refractive index exhibited normal dispersion behavior. In addition, the single oscillator, dispersion energies, the lattice dielectric constant, εL, plasma frequency, ωp, and optical conductivity, σop were all examined. The electrical conductivity and the activation energies for as-deposited and annealed thin films were calculated. Whereas the J-E properties of the as-deposited and annealed films indicated varied ranges of negative differential conductance NDC depending on the annealing temperatures.http://www.sciencedirect.com/science/article/pii/S2773064623000622Optical gapSwanepoel methodDispersion energyConductivityNDC |
| spellingShingle | S.K. Mohamed M.M. Abd El-Raheem M.M. Wakkad A.M. Abdel Hakeeam H.F. Mohamed Structural, optical, and electrical characteristics of Ge18Bi4Se78 chalcogenide glass for optoelectronic applications Memories - Materials, Devices, Circuits and Systems Optical gap Swanepoel method Dispersion energy Conductivity NDC |
| title | Structural, optical, and electrical characteristics of Ge18Bi4Se78 chalcogenide glass for optoelectronic applications |
| title_full | Structural, optical, and electrical characteristics of Ge18Bi4Se78 chalcogenide glass for optoelectronic applications |
| title_fullStr | Structural, optical, and electrical characteristics of Ge18Bi4Se78 chalcogenide glass for optoelectronic applications |
| title_full_unstemmed | Structural, optical, and electrical characteristics of Ge18Bi4Se78 chalcogenide glass for optoelectronic applications |
| title_short | Structural, optical, and electrical characteristics of Ge18Bi4Se78 chalcogenide glass for optoelectronic applications |
| title_sort | structural optical and electrical characteristics of ge18bi4se78 chalcogenide glass for optoelectronic applications |
| topic | Optical gap Swanepoel method Dispersion energy Conductivity NDC |
| url | http://www.sciencedirect.com/science/article/pii/S2773064623000622 |
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