Characterization of SiO<sub>2</sub> Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas
Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight int...
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MDPI AG
2021-09-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/17/5036 |
| _version_ | 1797521131318542336 |
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| author | Chulhee Cho Kwangho You Sijun Kim Youngseok Lee Jangjae Lee Shinjae You |
| author_facet | Chulhee Cho Kwangho You Sijun Kim Youngseok Lee Jangjae Lee Shinjae You |
| author_sort | Chulhee Cho |
| collection | DOAJ |
| description | Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO<sub>2</sub> etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO<sub>2</sub> etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators. |
| first_indexed | 2024-03-10T08:08:14Z |
| format | Article |
| id | doaj.art-d3287647585846abb09f60d1776ad940 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T08:08:14Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-d3287647585846abb09f60d1776ad9402023-11-22T10:55:20ZengMDPI AGMaterials1996-19442021-09-011417503610.3390/ma14175036Characterization of SiO<sub>2</sub> Etching Profiles in Pulse-Modulated Capacitively Coupled PlasmasChulhee Cho0Kwangho You1Sijun Kim2Youngseok Lee3Jangjae Lee4Shinjae You5Department of Physics, Chungnam National University, 99 Daehak-ro, Daejeon 34134, KoreaDepartment of Physics, Chungnam National University, 99 Daehak-ro, Daejeon 34134, KoreaNanotech, Yongin 28431, KoreaDepartment of Physics, Chungnam National University, 99 Daehak-ro, Daejeon 34134, KoreaDepartment of Physics, Chungnam National University, 99 Daehak-ro, Daejeon 34134, KoreaDepartment of Physics, Chungnam National University, 99 Daehak-ro, Daejeon 34134, KoreaAlthough pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO<sub>2</sub> etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO<sub>2</sub> etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators.https://www.mdpi.com/1996-1944/14/17/5036silicon dioxide etchingliquid fluorocarbon precursorglobal warming potential (GWP)etch selectivitycapacitively coupled plasmapulse-modulated plasma |
| spellingShingle | Chulhee Cho Kwangho You Sijun Kim Youngseok Lee Jangjae Lee Shinjae You Characterization of SiO<sub>2</sub> Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas Materials silicon dioxide etching liquid fluorocarbon precursor global warming potential (GWP) etch selectivity capacitively coupled plasma pulse-modulated plasma |
| title | Characterization of SiO<sub>2</sub> Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas |
| title_full | Characterization of SiO<sub>2</sub> Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas |
| title_fullStr | Characterization of SiO<sub>2</sub> Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas |
| title_full_unstemmed | Characterization of SiO<sub>2</sub> Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas |
| title_short | Characterization of SiO<sub>2</sub> Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas |
| title_sort | characterization of sio sub 2 sub etching profiles in pulse modulated capacitively coupled plasmas |
| topic | silicon dioxide etching liquid fluorocarbon precursor global warming potential (GWP) etch selectivity capacitively coupled plasma pulse-modulated plasma |
| url | https://www.mdpi.com/1996-1944/14/17/5036 |
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