Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP
Metalorganic chemical vapor deposition was used to grow single-crystalline tetragonal β-In2S3 films on InP to afford covalently bonded In2S3/InP heterostructures, with the crystal structure of these films identified by high-resolution scanning transmission electron microscopy, X-ray diffraction, and...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5000935 |
| _version_ | 1811263526345375744 |
|---|---|
| author | TaeWan Kim Hyeji Park Hyeoksu Bae Minhyuk Jo Soo-Hwan Jeong Sang Jun Lee Jae Cheol Shin Sang-Woo Kang |
| author_facet | TaeWan Kim Hyeji Park Hyeoksu Bae Minhyuk Jo Soo-Hwan Jeong Sang Jun Lee Jae Cheol Shin Sang-Woo Kang |
| author_sort | TaeWan Kim |
| collection | DOAJ |
| description | Metalorganic chemical vapor deposition was used to grow single-crystalline tetragonal β-In2S3 films on InP to afford covalently bonded In2S3/InP heterostructures, with the crystal structure of these films identified by high-resolution scanning transmission electron microscopy, X-ray diffraction, and Raman spectroscopy analyses, and the corresponding bandgap energies determined by photoluminescence measurements at room (300 K) and low temperatures (40 K). RT-PL measurements reveal the three peaks spectral emission at 464.3, 574.7, and 648.5 nm associated with luminescence from band-edge and two above conduction band-edge, respectively, although the LT-PL (40K) measurements of β-In2S3 film found two dominant peaks. Moreover, the above films exhibited n-type conductivity, with background electron concentration = 4.9 × 1015 cm–3, electron mobility = 1810.9 cm2 V–1 s–1, and resistivity = 0.704 Ω cm. Thus, single-crystalline β-In2S3 films deposited on InP are promising constituents of high-performance next-generation electronic, optoelectronic, and photovoltaic devices. |
| first_indexed | 2024-04-12T19:47:00Z |
| format | Article |
| id | doaj.art-d3a30506d26047dd95b6b21c05fd9e6f |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T19:47:00Z |
| publishDate | 2017-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-d3a30506d26047dd95b6b21c05fd9e6f2022-12-22T03:18:57ZengAIP Publishing LLCAIP Advances2158-32262017-12-01712125109125109-610.1063/1.5000935031712ADVSulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InPTaeWan Kim0Hyeji Park1Hyeoksu Bae2Minhyuk Jo3Soo-Hwan Jeong4Sang Jun Lee5Jae Cheol Shin6Sang-Woo Kang7Vacuum Technology Center, Korea Research Institute of Standards and Science, Daejeon 305-340, KoreaVacuum Technology Center, Korea Research Institute of Standards and Science, Daejeon 305-340, KoreaDivision of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, KoreaDepartment of Physics, Yeungnam University, Gyeongsan 38541, KoreaDepartment of Chemical Engineering, Kyungpook National University, 80 Daehak-ro, Pook-gu, Daegu 41566, KoreaDivision of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, KoreaDepartment of Physics, Yeungnam University, Gyeongsan 38541, KoreaVacuum Technology Center, Korea Research Institute of Standards and Science, Daejeon 305-340, KoreaMetalorganic chemical vapor deposition was used to grow single-crystalline tetragonal β-In2S3 films on InP to afford covalently bonded In2S3/InP heterostructures, with the crystal structure of these films identified by high-resolution scanning transmission electron microscopy, X-ray diffraction, and Raman spectroscopy analyses, and the corresponding bandgap energies determined by photoluminescence measurements at room (300 K) and low temperatures (40 K). RT-PL measurements reveal the three peaks spectral emission at 464.3, 574.7, and 648.5 nm associated with luminescence from band-edge and two above conduction band-edge, respectively, although the LT-PL (40K) measurements of β-In2S3 film found two dominant peaks. Moreover, the above films exhibited n-type conductivity, with background electron concentration = 4.9 × 1015 cm–3, electron mobility = 1810.9 cm2 V–1 s–1, and resistivity = 0.704 Ω cm. Thus, single-crystalline β-In2S3 films deposited on InP are promising constituents of high-performance next-generation electronic, optoelectronic, and photovoltaic devices.http://dx.doi.org/10.1063/1.5000935 |
| spellingShingle | TaeWan Kim Hyeji Park Hyeoksu Bae Minhyuk Jo Soo-Hwan Jeong Sang Jun Lee Jae Cheol Shin Sang-Woo Kang Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP AIP Advances |
| title | Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP |
| title_full | Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP |
| title_fullStr | Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP |
| title_full_unstemmed | Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP |
| title_short | Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP |
| title_sort | sulfurization induced growth of single crystalline high mobility β in2s3 films on inp |
| url | http://dx.doi.org/10.1063/1.5000935 |
| work_keys_str_mv | AT taewankim sulfurizationinducedgrowthofsinglecrystallinehighmobilitybin2s3filmsoninp AT hyejipark sulfurizationinducedgrowthofsinglecrystallinehighmobilitybin2s3filmsoninp AT hyeoksubae sulfurizationinducedgrowthofsinglecrystallinehighmobilitybin2s3filmsoninp AT minhyukjo sulfurizationinducedgrowthofsinglecrystallinehighmobilitybin2s3filmsoninp AT soohwanjeong sulfurizationinducedgrowthofsinglecrystallinehighmobilitybin2s3filmsoninp AT sangjunlee sulfurizationinducedgrowthofsinglecrystallinehighmobilitybin2s3filmsoninp AT jaecheolshin sulfurizationinducedgrowthofsinglecrystallinehighmobilitybin2s3filmsoninp AT sangwookang sulfurizationinducedgrowthofsinglecrystallinehighmobilitybin2s3filmsoninp |