An indirect-to-direct band gap transition of NaSbS2 via minor Ga doping: A theoretical study

The efficiency of NaSbS2 is limited by its wide indirect band gap. Alloying is a very effective strategy to tune the band gap over a wide range for the mixed-anion NaSb(S,Se)2 alloys. However, these compounds are still indirect band gap semiconductors. The influence of Ga doping on the structure, el...

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Bibliographic Details
Main Authors: Huan Peng, Rongjian Sa, Diwen Liu
Format: Article
Language:English
Published: Elsevier 2022-12-01
Series:Arabian Journal of Chemistry
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S1878535222006979

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