An indirect-to-direct band gap transition of NaSbS2 via minor Ga doping: A theoretical study
The efficiency of NaSbS2 is limited by its wide indirect band gap. Alloying is a very effective strategy to tune the band gap over a wide range for the mixed-anion NaSb(S,Se)2 alloys. However, these compounds are still indirect band gap semiconductors. The influence of Ga doping on the structure, el...
Main Authors: | Huan Peng, Rongjian Sa, Diwen Liu |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2022-12-01
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Series: | Arabian Journal of Chemistry |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S1878535222006979 |
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