Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors
This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that...
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| Format: | Article |
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MDPI AG
2020-12-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/1/7 |
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| author | Yu-Shyan Lin Shin-Fu Lin |
| author_facet | Yu-Shyan Lin Shin-Fu Lin |
| author_sort | Yu-Shyan Lin |
| collection | DOAJ |
| description | This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO<sub>2</sub> passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (<i>NF</i><sub>min</sub>) of the HEMT with TiO<sub>2</sub> passivation is significantly reduced. |
| first_indexed | 2024-03-10T13:49:48Z |
| format | Article |
| id | doaj.art-d3bfb5b5efd742d18301350bd08ddd0d |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T13:49:48Z |
| publishDate | 2020-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-d3bfb5b5efd742d18301350bd08ddd0d2023-11-21T02:20:34ZengMDPI AGMicromachines2072-666X2020-12-01121710.3390/mi12010007Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility TransistorsYu-Shyan Lin0Shin-Fu Lin1Department of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd., Shou-Feng, Hualien 974, TaiwanDepartment of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd., Shou-Feng, Hualien 974, TaiwanThis study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO<sub>2</sub> passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (<i>NF</i><sub>min</sub>) of the HEMT with TiO<sub>2</sub> passivation is significantly reduced.https://www.mdpi.com/2072-666X/12/1/7metallorganic chemical vapor deposition (MOCVD)passivationHfO<sub>2</sub>TiO<sub>2</sub>GaNhigh-electron mobility transistor (HEMT) |
| spellingShingle | Yu-Shyan Lin Shin-Fu Lin Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors Micromachines metallorganic chemical vapor deposition (MOCVD) passivation HfO<sub>2</sub> TiO<sub>2</sub> GaN high-electron mobility transistor (HEMT) |
| title | Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors |
| title_full | Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors |
| title_fullStr | Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors |
| title_full_unstemmed | Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors |
| title_short | Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors |
| title_sort | large signal linearity and high frequency noise of passivated algan gan high electron mobility transistors |
| topic | metallorganic chemical vapor deposition (MOCVD) passivation HfO<sub>2</sub> TiO<sub>2</sub> GaN high-electron mobility transistor (HEMT) |
| url | https://www.mdpi.com/2072-666X/12/1/7 |
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