Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode
Phase-change probe memory has been extensively regarded as one of the most prospective candidates to satisfy the recording density requirement from the incoming age of big data. However, in spite of recent advances, the energy consumption of phase-change probe memory still remains fairly high due to...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2016-10-01
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| Series: | Nanotechnology Reviews |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/ntrev-2016-0029 |
| _version_ | 1818909292551471104 |
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| author | Wang Lei Gong Sidi Yang Cihui Wen Jing |
| author_facet | Wang Lei Gong Sidi Yang Cihui Wen Jing |
| author_sort | Wang Lei |
| collection | DOAJ |
| description | Phase-change probe memory has been extensively regarded as one of the most prospective candidates to satisfy the recording density requirement from the incoming age of big data. However, in spite of recent advances, the energy consumption of phase-change probe memory still remains fairly high due to the use of the diamond-like carbon bottom electrode usually having a relatively high electric resistivity. In this case, the possibility of using titanium nitride to replace the diamond-like carbon as the electrode materials is investigated in this paper. The thickness and time-dependent resistivity of titanium nitride film is measured, allowing for a more conductive characteristic and a better stability than diamond-like carbon film at the same condition. Consequently, the writing of crystalline bit using the previously designed phase-change probe memory architecture but with titanium nitride bottom electrode is performed experimentally, and results show that using titanium nitride as bottom electrode would enable an achievement of ultra-high recording density with lower energy consumption than the phase-change stack with diamond-like carbon electrode. |
| first_indexed | 2024-12-19T22:24:36Z |
| format | Article |
| id | doaj.art-d3c2975112c14c76b3a7e9373cc8bb9a |
| institution | Directory Open Access Journal |
| issn | 2191-9089 2191-9097 |
| language | English |
| last_indexed | 2024-12-19T22:24:36Z |
| publishDate | 2016-10-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanotechnology Reviews |
| spelling | doaj.art-d3c2975112c14c76b3a7e9373cc8bb9a2022-12-21T20:03:32ZengDe GruyterNanotechnology Reviews2191-90892191-90972016-10-015545546010.1515/ntrev-2016-0029Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrodeWang Lei0Gong Sidi1Yang Cihui2Wen Jing3School of Information Engineering, Nanchang Hangkong University, 330063, Nanchang, P. R. China, Phone: +86 791 83953463, Fax: +86 791 83953732School of Information Engineering, Nanchang Hangkong University, 330063, Nanchang, P. R. ChinaSchool of Information Engineering, Nanchang Hangkong University, 330063, Nanchang, P. R. ChinaSchool of Information Engineering, Nanchang Hangkong University, 330063, Nanchang, P. R. ChinaPhase-change probe memory has been extensively regarded as one of the most prospective candidates to satisfy the recording density requirement from the incoming age of big data. However, in spite of recent advances, the energy consumption of phase-change probe memory still remains fairly high due to the use of the diamond-like carbon bottom electrode usually having a relatively high electric resistivity. In this case, the possibility of using titanium nitride to replace the diamond-like carbon as the electrode materials is investigated in this paper. The thickness and time-dependent resistivity of titanium nitride film is measured, allowing for a more conductive characteristic and a better stability than diamond-like carbon film at the same condition. Consequently, the writing of crystalline bit using the previously designed phase-change probe memory architecture but with titanium nitride bottom electrode is performed experimentally, and results show that using titanium nitride as bottom electrode would enable an achievement of ultra-high recording density with lower energy consumption than the phase-change stack with diamond-like carbon electrode.https://doi.org/10.1515/ntrev-2016-0029energy consumptionnanocrystalline materialsphase-change probe memoryphase transformationtitanium nitride |
| spellingShingle | Wang Lei Gong Sidi Yang Cihui Wen Jing Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode Nanotechnology Reviews energy consumption nanocrystalline materials phase-change probe memory phase transformation titanium nitride |
| title | Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode |
| title_full | Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode |
| title_fullStr | Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode |
| title_full_unstemmed | Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode |
| title_short | Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode |
| title_sort | towards low energy consumption data storage era using phase change probe memory with tin bottom electrode |
| topic | energy consumption nanocrystalline materials phase-change probe memory phase transformation titanium nitride |
| url | https://doi.org/10.1515/ntrev-2016-0029 |
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