Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors
Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum cou...
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| Format: | Article |
| Language: | English |
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Electronics and Telecommunications Research Institute (ETRI)
2022-06-01
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| Series: | ETRI Journal |
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| Online Access: | https://doi.org/10.4218/etrij.2021-0070 |