Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide Interface
Abstract Electric field reconstruction at interfaces plays a crucial role in device performances controlling, for example, Schottky potential barrier and interfacial Rashba effect. Here, scanning transmission electron microscopy (STEM) and ab‐initio calculation are used to estimate the atomic‐scale...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-03-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202202165 |
| _version_ | 1797772485772443648 |
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| author | Qingxuan Jia Alexandre Gloter |
| author_facet | Qingxuan Jia Alexandre Gloter |
| author_sort | Qingxuan Jia |
| collection | DOAJ |
| description | Abstract Electric field reconstruction at interfaces plays a crucial role in device performances controlling, for example, Schottky potential barrier and interfacial Rashba effect. Here, scanning transmission electron microscopy (STEM) and ab‐initio calculation are used to estimate the atomic‐scale and large‐scale potential reconstruction at the interface between a metallic oxide SrRuO3 (SRO) thin film and an insulating DyScO3 (DSO) substrate. The intensity and the symmetry of the large‐scale electrostatic reconstruction at the interface is probed by 4D‐STEM discussing the center‐of‐mass shift for different angular ranges detection. Numerical simulations indicate that thermal diffuse scattered (TDS) electrons can be sensitive to large‐scale electric field and experiments based on these diffused electrons near the interface confirm that the electric field extends more in the insulating DyScO3 (DSO) side. The magnitude of the electrostatic drop at the interface estimated by the 4D‐STEM experiment is in accordance with the ab‐initio values for a p‐type reconstruction of the interface plane. Furthermore, an atomically resolved TDS potential asymmetry is observed in real‐space at the SRO/DSO interface by 4D‐STEM. This asymmetry is associated with the formation of a local ferroelectric type dipole at the interfacial unit‐cell revealing unambiguously the balance evolution between antiferrodistortive and ferroelectric instabilities at the interface between a metallic SRO and an insulating DSO. |
| first_indexed | 2024-03-12T21:51:35Z |
| format | Article |
| id | doaj.art-d3e22bdfa168467daa5f0e37d92ff223 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T21:51:35Z |
| publishDate | 2023-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-d3e22bdfa168467daa5f0e37d92ff2232023-07-26T01:36:20ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-03-01107n/an/a10.1002/admi.202202165Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide InterfaceQingxuan Jia0Alexandre Gloter1State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 ChinaUniversité Paris‐Saclay CNRS Laboratoire de Physique des Solides Orsay 91405 FranceAbstract Electric field reconstruction at interfaces plays a crucial role in device performances controlling, for example, Schottky potential barrier and interfacial Rashba effect. Here, scanning transmission electron microscopy (STEM) and ab‐initio calculation are used to estimate the atomic‐scale and large‐scale potential reconstruction at the interface between a metallic oxide SrRuO3 (SRO) thin film and an insulating DyScO3 (DSO) substrate. The intensity and the symmetry of the large‐scale electrostatic reconstruction at the interface is probed by 4D‐STEM discussing the center‐of‐mass shift for different angular ranges detection. Numerical simulations indicate that thermal diffuse scattered (TDS) electrons can be sensitive to large‐scale electric field and experiments based on these diffused electrons near the interface confirm that the electric field extends more in the insulating DyScO3 (DSO) side. The magnitude of the electrostatic drop at the interface estimated by the 4D‐STEM experiment is in accordance with the ab‐initio values for a p‐type reconstruction of the interface plane. Furthermore, an atomically resolved TDS potential asymmetry is observed in real‐space at the SRO/DSO interface by 4D‐STEM. This asymmetry is associated with the formation of a local ferroelectric type dipole at the interfacial unit‐cell revealing unambiguously the balance evolution between antiferrodistortive and ferroelectric instabilities at the interface between a metallic SRO and an insulating DSO.https://doi.org/10.1002/admi.202202165ab‐initio calculationinterfacenanostructureoxidepotential wellSTEM |
| spellingShingle | Qingxuan Jia Alexandre Gloter Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide Interface Advanced Materials Interfaces ab‐initio calculation interface nanostructure oxide potential well STEM |
| title | Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide Interface |
| title_full | Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide Interface |
| title_fullStr | Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide Interface |
| title_full_unstemmed | Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide Interface |
| title_short | Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide Interface |
| title_sort | real space observation of potential reconstruction at metallic insulating oxide interface |
| topic | ab‐initio calculation interface nanostructure oxide potential well STEM |
| url | https://doi.org/10.1002/admi.202202165 |
| work_keys_str_mv | AT qingxuanjia realspaceobservationofpotentialreconstructionatmetallicinsulatingoxideinterface AT alexandregloter realspaceobservationofpotentialreconstructionatmetallicinsulatingoxideinterface |