Real‐Space Observation of Potential Reconstruction at Metallic/Insulating Oxide Interface

Abstract Electric field reconstruction at interfaces plays a crucial role in device performances controlling, for example, Schottky potential barrier and interfacial Rashba effect. Here, scanning transmission electron microscopy (STEM) and ab‐initio calculation are used to estimate the atomic‐scale...

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Bibliographic Details
Main Authors: Qingxuan Jia, Alexandre Gloter
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Materials Interfaces
Subjects:
Online Access:https://doi.org/10.1002/admi.202202165