Graphene Growth Directly on SiO<sub>2</sub>/Si by Hot Filament Chemical Vapor Deposition
We report the first direct synthesis of graphene on SiO<sub>2</sub>/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room...
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| Format: | Article |
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MDPI AG
2021-12-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/1/109 |
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| author | Sandra Rodríguez-Villanueva Frank Mendoza Alvaro A. Instan Ram S. Katiyar Brad R. Weiner Gerardo Morell |
| author_facet | Sandra Rodríguez-Villanueva Frank Mendoza Alvaro A. Instan Ram S. Katiyar Brad R. Weiner Gerardo Morell |
| author_sort | Sandra Rodríguez-Villanueva |
| collection | DOAJ |
| description | We report the first direct synthesis of graphene on SiO<sub>2</sub>/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO<sub>2</sub>/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO<sub>2</sub>/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy. |
| first_indexed | 2024-03-10T03:29:20Z |
| format | Article |
| id | doaj.art-d3fdb6457b354ac9b3772cbe5a3b6e2a |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:29:20Z |
| publishDate | 2021-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-d3fdb6457b354ac9b3772cbe5a3b6e2a2023-11-23T12:01:37ZengMDPI AGNanomaterials2079-49912021-12-0112110910.3390/nano12010109Graphene Growth Directly on SiO<sub>2</sub>/Si by Hot Filament Chemical Vapor DepositionSandra Rodríguez-Villanueva0Frank Mendoza1Alvaro A. Instan2Ram S. Katiyar3Brad R. Weiner4Gerardo Morell5Department of Physics, College of Natural Science, Rio Piedras Campus, University of Puerto Rico, San Juan, PR 00925, USADepartment of Physics, College of Arts and Sciences, Mayagüez Campus, University of Puerto Rico, Mayaguez, PR 00682, USADepartment of Physics, College of Natural Science, Rio Piedras Campus, University of Puerto Rico, San Juan, PR 00925, USADepartment of Physics, College of Natural Science, Rio Piedras Campus, University of Puerto Rico, San Juan, PR 00925, USADepartment of Physics, College of Natural Science, Rio Piedras Campus, University of Puerto Rico, San Juan, PR 00925, USADepartment of Physics, College of Natural Science, Rio Piedras Campus, University of Puerto Rico, San Juan, PR 00925, USAWe report the first direct synthesis of graphene on SiO<sub>2</sub>/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO<sub>2</sub>/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO<sub>2</sub>/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy.https://www.mdpi.com/2079-4991/12/1/109graphenehot filament chemical vapor depositioncopper catalytic effect |
| spellingShingle | Sandra Rodríguez-Villanueva Frank Mendoza Alvaro A. Instan Ram S. Katiyar Brad R. Weiner Gerardo Morell Graphene Growth Directly on SiO<sub>2</sub>/Si by Hot Filament Chemical Vapor Deposition Nanomaterials graphene hot filament chemical vapor deposition copper catalytic effect |
| title | Graphene Growth Directly on SiO<sub>2</sub>/Si by Hot Filament Chemical Vapor Deposition |
| title_full | Graphene Growth Directly on SiO<sub>2</sub>/Si by Hot Filament Chemical Vapor Deposition |
| title_fullStr | Graphene Growth Directly on SiO<sub>2</sub>/Si by Hot Filament Chemical Vapor Deposition |
| title_full_unstemmed | Graphene Growth Directly on SiO<sub>2</sub>/Si by Hot Filament Chemical Vapor Deposition |
| title_short | Graphene Growth Directly on SiO<sub>2</sub>/Si by Hot Filament Chemical Vapor Deposition |
| title_sort | graphene growth directly on sio sub 2 sub si by hot filament chemical vapor deposition |
| topic | graphene hot filament chemical vapor deposition copper catalytic effect |
| url | https://www.mdpi.com/2079-4991/12/1/109 |
| work_keys_str_mv | AT sandrarodriguezvillanueva graphenegrowthdirectlyonsiosub2subsibyhotfilamentchemicalvapordeposition AT frankmendoza graphenegrowthdirectlyonsiosub2subsibyhotfilamentchemicalvapordeposition AT alvaroainstan graphenegrowthdirectlyonsiosub2subsibyhotfilamentchemicalvapordeposition AT ramskatiyar graphenegrowthdirectlyonsiosub2subsibyhotfilamentchemicalvapordeposition AT bradrweiner graphenegrowthdirectlyonsiosub2subsibyhotfilamentchemicalvapordeposition AT gerardomorell graphenegrowthdirectlyonsiosub2subsibyhotfilamentchemicalvapordeposition |