Black silicon for near-infrared and ultraviolet photodetection: A review
As a typical representative of micro/nano-textured silicon, black silicon has excellent light absorption properties and is gradually surfacing as a substitute for standard silicon in photoelectric devices. Black silicon overcomes the limitations of traditional silicon-based devices, which are unable...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0133770 |
| _version_ | 1811154862851751936 |
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| author | Zhou Zhao Zengxing Zhang Junmin Jing Rui Gao Zhiwei Liao Wenjun Zhang Guohua Liu Yonghua Wang Kaiying Wang Chenyang Xue |
| author_facet | Zhou Zhao Zengxing Zhang Junmin Jing Rui Gao Zhiwei Liao Wenjun Zhang Guohua Liu Yonghua Wang Kaiying Wang Chenyang Xue |
| author_sort | Zhou Zhao |
| collection | DOAJ |
| description | As a typical representative of micro/nano-textured silicon, black silicon has excellent light absorption properties and is gradually surfacing as a substitute for standard silicon in photoelectric devices. Black silicon overcomes the limitations of traditional silicon-based devices, which are unable to achieve infrared light detection at wavelengths >1100 nm and have low quantum efficiency and sensitivity in ultraviolet light detection. In this article, the recent theoretical and experimental breakthroughs in near-infrared and ultraviolet detection using black silicon are summarized in detail. First, black silicon and the techniques for its fabrication are introduced. Then, the application of enhanced black silicon photodetectors within or above the bandgap limit and black silicon fabricated using different methods in infrared detection is discussed. In principle, infrared detection using black silicon is achieved by jointly utilizing element doping, localized surface plasmon resonance effect, and heterojunction formation. In addition, the application of black silicon in ultraviolet detection is also introduced. Ultraviolet detection is realized by an induced junction and the self-built electric field between black silicon and aluminum oxide. Finally, the increasingly growing potential of black silicon in near-infrared and ultraviolet detection applications, such as infrared night vision imaging, signal detection, ultraviolet light intensity monitoring, and national defense early warning, is further discussed. |
| first_indexed | 2024-04-10T04:24:19Z |
| format | Article |
| id | doaj.art-d41593766c014a9992f8b3e044325ee8 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-10T04:24:19Z |
| publishDate | 2023-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-d41593766c014a9992f8b3e044325ee82023-03-10T17:29:59ZengAIP Publishing LLCAPL Materials2166-532X2023-02-01112021107021107-2810.1063/5.0133770Black silicon for near-infrared and ultraviolet photodetection: A reviewZhou Zhao0Zengxing Zhang1Junmin Jing2Rui Gao3Zhiwei Liao4Wenjun Zhang5Guohua Liu6Yonghua Wang7Kaiying Wang8Chenyang Xue9Key Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, ChinaSchool of Aerospace Engineering, Xiamen University, Xiamen 361102, ChinaKey Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, ChinaKey Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, ChinaKey Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, ChinaSchool of Aerospace Engineering, Xiamen University, Xiamen 361102, ChinaBeijing Key Laboratory of Multiphase Flow and Heat Transfer for Low Grade Energy Utilization, North China Electric Power University, Beijing 102206, ChinaKey Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, ChinaDepartment of Microsystems, University of South-Eastern Norway, 3184 Horten, NorwayKey Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, ChinaAs a typical representative of micro/nano-textured silicon, black silicon has excellent light absorption properties and is gradually surfacing as a substitute for standard silicon in photoelectric devices. Black silicon overcomes the limitations of traditional silicon-based devices, which are unable to achieve infrared light detection at wavelengths >1100 nm and have low quantum efficiency and sensitivity in ultraviolet light detection. In this article, the recent theoretical and experimental breakthroughs in near-infrared and ultraviolet detection using black silicon are summarized in detail. First, black silicon and the techniques for its fabrication are introduced. Then, the application of enhanced black silicon photodetectors within or above the bandgap limit and black silicon fabricated using different methods in infrared detection is discussed. In principle, infrared detection using black silicon is achieved by jointly utilizing element doping, localized surface plasmon resonance effect, and heterojunction formation. In addition, the application of black silicon in ultraviolet detection is also introduced. Ultraviolet detection is realized by an induced junction and the self-built electric field between black silicon and aluminum oxide. Finally, the increasingly growing potential of black silicon in near-infrared and ultraviolet detection applications, such as infrared night vision imaging, signal detection, ultraviolet light intensity monitoring, and national defense early warning, is further discussed.http://dx.doi.org/10.1063/5.0133770 |
| spellingShingle | Zhou Zhao Zengxing Zhang Junmin Jing Rui Gao Zhiwei Liao Wenjun Zhang Guohua Liu Yonghua Wang Kaiying Wang Chenyang Xue Black silicon for near-infrared and ultraviolet photodetection: A review APL Materials |
| title | Black silicon for near-infrared and ultraviolet photodetection: A review |
| title_full | Black silicon for near-infrared and ultraviolet photodetection: A review |
| title_fullStr | Black silicon for near-infrared and ultraviolet photodetection: A review |
| title_full_unstemmed | Black silicon for near-infrared and ultraviolet photodetection: A review |
| title_short | Black silicon for near-infrared and ultraviolet photodetection: A review |
| title_sort | black silicon for near infrared and ultraviolet photodetection a review |
| url | http://dx.doi.org/10.1063/5.0133770 |
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