Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing
In this project we investigated the extended-gate field-effect transistor (EGFET) structure used with ITO (Indium Tin Oxide)/PET (Polyethylene Terephthalate) sensitive films acting as the extended-gate part of an EGFET obtained from a combination of FETs from the CD4007 chip. We tested the device as...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/23/20/8350 |
| _version_ | 1797572354811887616 |
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| author | Z. Mouffak V. Adapala |
| author_facet | Z. Mouffak V. Adapala |
| author_sort | Z. Mouffak |
| collection | DOAJ |
| description | In this project we investigated the extended-gate field-effect transistor (EGFET) structure used with ITO (Indium Tin Oxide)/PET (Polyethylene Terephthalate) sensitive films acting as the extended-gate part of an EGFET obtained from a combination of FETs from the CD4007 chip. We tested the device as a pH sensor by immersing the ITO/PET electrode in several chemical solutions of acidic and basic nature, including hydrogen peroxide, acetic acid, sulfuric acid, and ammonium hydroxide, at different concentrations. Using a Tektronix 4200A sourcemeter, we plotted the current–voltage (I–V) characteristics for the different chemical solutions, and we established a correlation to the pH changes. Results from the plotted I–V characteristics show a great dependance of the drain current (I<sub>D</sub>) on solution concentration. Furthermore, we measured the pH of each of the used solutions, and we established a relationship between the drain current and the pH value. Our results show a consistent decrease in the current with an increase in the pH value, although with different rates depending on the solution. The device showed high voltage sensitivity at 0.23 V per pH unit when tested in sulfuric acid. |
| first_indexed | 2024-03-10T20:55:05Z |
| format | Article |
| id | doaj.art-d453dbb16c6248c99b220baf34a64b1b |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T20:55:05Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-d453dbb16c6248c99b220baf34a64b1b2023-11-19T18:01:30ZengMDPI AGSensors1424-82202023-10-012320835010.3390/s23208350Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH SensingZ. Mouffak0V. Adapala1Department of Electrical and Computer Engineering, California State University, Fresno, CA 93740, USADepartment of Electrical and Computer Engineering, California State University, Fresno, CA 93740, USAIn this project we investigated the extended-gate field-effect transistor (EGFET) structure used with ITO (Indium Tin Oxide)/PET (Polyethylene Terephthalate) sensitive films acting as the extended-gate part of an EGFET obtained from a combination of FETs from the CD4007 chip. We tested the device as a pH sensor by immersing the ITO/PET electrode in several chemical solutions of acidic and basic nature, including hydrogen peroxide, acetic acid, sulfuric acid, and ammonium hydroxide, at different concentrations. Using a Tektronix 4200A sourcemeter, we plotted the current–voltage (I–V) characteristics for the different chemical solutions, and we established a correlation to the pH changes. Results from the plotted I–V characteristics show a great dependance of the drain current (I<sub>D</sub>) on solution concentration. Furthermore, we measured the pH of each of the used solutions, and we established a relationship between the drain current and the pH value. Our results show a consistent decrease in the current with an increase in the pH value, although with different rates depending on the solution. The device showed high voltage sensitivity at 0.23 V per pH unit when tested in sulfuric acid.https://www.mdpi.com/1424-8220/23/20/8350extended-gate field-effect transistorEGFETchemical sensorspH sensingITO/PET |
| spellingShingle | Z. Mouffak V. Adapala Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing Sensors extended-gate field-effect transistor EGFET chemical sensors pH sensing ITO/PET |
| title | Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing |
| title_full | Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing |
| title_fullStr | Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing |
| title_full_unstemmed | Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing |
| title_short | Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing |
| title_sort | exploring the ito pet extended gate field effect transistor egfet for ph sensing |
| topic | extended-gate field-effect transistor EGFET chemical sensors pH sensing ITO/PET |
| url | https://www.mdpi.com/1424-8220/23/20/8350 |
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