Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick...
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2013-08-01
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Series: | APL Materials |
Online Access: | http://link.aip.org/link/doi/10.1063/1.4818356 |
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author | P. L. Bach J. M. Vila-Fungueiriño V. Leborán Elías Ferreiro-Vila B. Rodríguez-González F. Rivadulla |
author_facet | P. L. Bach J. M. Vila-Fungueiriño V. Leborán Elías Ferreiro-Vila B. Rodríguez-González F. Rivadulla |
author_sort | P. L. Bach |
collection | DOAJ |
description | We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors. |
first_indexed | 2024-12-11T13:05:43Z |
format | Article |
id | doaj.art-d46c035693fc468b899a73e952acb701 |
institution | Directory Open Access Journal |
issn | 2166-532X |
language | English |
last_indexed | 2024-12-11T13:05:43Z |
publishDate | 2013-08-01 |
publisher | AIP Publishing LLC |
record_format | Article |
series | APL Materials |
spelling | doaj.art-d46c035693fc468b899a73e952acb7012022-12-22T01:06:19ZengAIP Publishing LLCAPL Materials2166-532X2013-08-011202110102110110.1063/1.4818356Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δP. L. BachJ. M. Vila-FungueiriñoV. LeboránElías Ferreiro-VilaB. Rodríguez-GonzálezF. RivadullaWe propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors.http://link.aip.org/link/doi/10.1063/1.4818356 |
spellingShingle | P. L. Bach J. M. Vila-Fungueiriño V. Leborán Elías Ferreiro-Vila B. Rodríguez-González F. Rivadulla Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ APL Materials |
title | Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ |
title_full | Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ |
title_fullStr | Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ |
title_full_unstemmed | Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ |
title_short | Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ |
title_sort | strain induced enhancement of the thermoelectric power in thin films of hole doped la2nio4 δ |
url | http://link.aip.org/link/doi/10.1063/1.4818356 |
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