Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ

We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick...

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Main Authors: P. L. Bach, J. M. Vila-Fungueiriño, V. Leborán, Elías Ferreiro-Vila, B. Rodríguez-González, F. Rivadulla
Format: Article
Language:English
Published: AIP Publishing LLC 2013-08-01
Series:APL Materials
Online Access:http://link.aip.org/link/doi/10.1063/1.4818356
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author P. L. Bach
J. M. Vila-Fungueiriño
V. Leborán
Elías Ferreiro-Vila
B. Rodríguez-González
F. Rivadulla
author_facet P. L. Bach
J. M. Vila-Fungueiriño
V. Leborán
Elías Ferreiro-Vila
B. Rodríguez-González
F. Rivadulla
author_sort P. L. Bach
collection DOAJ
description We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors.
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spelling doaj.art-d46c035693fc468b899a73e952acb7012022-12-22T01:06:19ZengAIP Publishing LLCAPL Materials2166-532X2013-08-011202110102110110.1063/1.4818356Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δP. L. BachJ. M. Vila-FungueiriñoV. LeboránElías Ferreiro-VilaB. Rodríguez-GonzálezF. RivadullaWe propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors.http://link.aip.org/link/doi/10.1063/1.4818356
spellingShingle P. L. Bach
J. M. Vila-Fungueiriño
V. Leborán
Elías Ferreiro-Vila
B. Rodríguez-González
F. Rivadulla
Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
APL Materials
title Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
title_full Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
title_fullStr Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
title_full_unstemmed Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
title_short Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
title_sort strain induced enhancement of the thermoelectric power in thin films of hole doped la2nio4 δ
url http://link.aip.org/link/doi/10.1063/1.4818356
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