A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K
A CMOS-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is proposed and theoretically analyzed. It has a compacted footprint of 43.4 μm<sup>2</sup> (R = 2 μm), a data rate of 45 Gbps, an insertion loss of −8 dB, a static extinction ratio of 22 dB, and an energy consum...
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| Format: | Article |
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MDPI AG
2022-04-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/8/3947 |
| _version_ | 1797437050673168384 |
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| author | Jiaqi Sun Zhihua Li Wenwu Wang |
| author_facet | Jiaqi Sun Zhihua Li Wenwu Wang |
| author_sort | Jiaqi Sun |
| collection | DOAJ |
| description | A CMOS-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is proposed and theoretically analyzed. It has a compacted footprint of 43.4 μm<sup>2</sup> (R = 2 μm), a data rate of 45 Gbps, an insertion loss of −8 dB, a static extinction ratio of 22 dB, and an energy consumption of 4.5 pJ/bit when 2.5 V peak-to-peak voltage is applied. Moreover, it works well when temperature varies around 60 K. A method of tuning the resonant wavelength based on the carrier concentration is proposed here because the device is reliable when the linewidth varies within ±5%. CIPMRM provides a way to overcome the shortcomings of temperature and process sensitivity, which are characteristics of the photonic micro-ring modulator. It can be used in optoelectronic integration for its small size and stable performance. |
| first_indexed | 2024-03-09T11:12:24Z |
| format | Article |
| id | doaj.art-d48912d3d4924ca798e7e1db11aeadc3 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T11:12:24Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-d48912d3d4924ca798e7e1db11aeadc32023-12-01T00:42:09ZengMDPI AGApplied Sciences2076-34172022-04-01128394710.3390/app12083947A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 KJiaqi Sun0Zhihua Li1Wenwu Wang2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaA CMOS-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is proposed and theoretically analyzed. It has a compacted footprint of 43.4 μm<sup>2</sup> (R = 2 μm), a data rate of 45 Gbps, an insertion loss of −8 dB, a static extinction ratio of 22 dB, and an energy consumption of 4.5 pJ/bit when 2.5 V peak-to-peak voltage is applied. Moreover, it works well when temperature varies around 60 K. A method of tuning the resonant wavelength based on the carrier concentration is proposed here because the device is reliable when the linewidth varies within ±5%. CIPMRM provides a way to overcome the shortcomings of temperature and process sensitivity, which are characteristics of the photonic micro-ring modulator. It can be used in optoelectronic integration for its small size and stable performance.https://www.mdpi.com/2076-3417/12/8/3947plasmonicsmicro-ring modulatorCMOStemperature stabilityoptoelectronic integration |
| spellingShingle | Jiaqi Sun Zhihua Li Wenwu Wang A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K Applied Sciences plasmonics micro-ring modulator CMOS temperature stability optoelectronic integration |
| title | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K |
| title_full | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K |
| title_fullStr | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K |
| title_full_unstemmed | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K |
| title_short | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K |
| title_sort | cmos compatible carrier injection plasmonic micro ring modulator cipmrm with stable performance as temperature varying around 60 k |
| topic | plasmonics micro-ring modulator CMOS temperature stability optoelectronic integration |
| url | https://www.mdpi.com/2076-3417/12/8/3947 |
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