Influence of growth impurities on thermal defect formation in monocrystalline silicon
The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The magnetic, micromechanical and structural properties...
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2021-08-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | https://journals.pnu.edu.ua/index.php/pcss/article/view/4991 |