The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect
The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress....
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MDPI AG
2021-09-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/21/17/5887 |
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| author | Linlin Shi Hong Wang Xiaohui Ma Yunpeng Wang Fei Wang Dongxu Zhao Dezhen Shen |
| author_facet | Linlin Shi Hong Wang Xiaohui Ma Yunpeng Wang Fei Wang Dongxu Zhao Dezhen Shen |
| author_sort | Linlin Shi |
| collection | DOAJ |
| description | The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices. |
| first_indexed | 2024-03-10T08:04:21Z |
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| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T08:04:21Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
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| series | Sensors |
| spelling | doaj.art-d4cb93532a7a4d20b6448e9a18b550dd2023-11-22T11:13:58ZengMDPI AGSensors1424-82202021-09-012117588710.3390/s21175887The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling EffectLinlin Shi0Hong Wang1Xiaohui Ma2Yunpeng Wang3Fei Wang4Dongxu Zhao5Dezhen Shen6State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, ChinaThe realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.https://www.mdpi.com/1424-8220/21/17/5887microwiresdeformation behaviorelectroluminescencebending emission |
| spellingShingle | Linlin Shi Hong Wang Xiaohui Ma Yunpeng Wang Fei Wang Dongxu Zhao Dezhen Shen The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect Sensors microwires deformation behavior electroluminescence bending emission |
| title | The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect |
| title_full | The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect |
| title_fullStr | The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect |
| title_full_unstemmed | The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect |
| title_short | The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect |
| title_sort | deformation behavior and bending emissions of zno microwire affected by deformation induced defects and thermal tunneling effect |
| topic | microwires deformation behavior electroluminescence bending emission |
| url | https://www.mdpi.com/1424-8220/21/17/5887 |
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