Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays
This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9001057/ |
| _version_ | 1818416940926894080 |
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| author | Chih-Lung Lin Jui-Hung Chang Po-Cheng Lai Li-Wei Shih Sung-Chun Chen Mao-Hsun Cheng |
| author_facet | Chih-Lung Lin Jui-Hung Chang Po-Cheng Lai Li-Wei Shih Sung-Chun Chen Mao-Hsun Cheng |
| author_sort | Chih-Lung Lin |
| collection | DOAJ |
| description | This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme. |
| first_indexed | 2024-12-14T11:58:53Z |
| format | Article |
| id | doaj.art-d50b90a27def4dad869d85ace6573937 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T11:58:53Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-d50b90a27def4dad869d85ace65739372022-12-21T23:02:03ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01823524010.1109/JEDS.2020.29745769001057Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED DisplaysChih-Lung Lin0https://orcid.org/0000-0002-4948-8591Jui-Hung Chang1Po-Cheng Lai2https://orcid.org/0000-0002-4124-4226Li-Wei Shih3Sung-Chun Chen4Mao-Hsun Cheng5Department of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanAU Optronics Corporation, Hsinchu, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanAU Optronics Corporation, Hsinchu, TaiwanThis work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.https://ieeexplore.ieee.org/document/9001057/Active-matrix organic light-emitting diode~(AMOLED)low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs)leakage current prevention |
| spellingShingle | Chih-Lung Lin Jui-Hung Chang Po-Cheng Lai Li-Wei Shih Sung-Chun Chen Mao-Hsun Cheng Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays IEEE Journal of the Electron Devices Society Active-matrix organic light-emitting diode~(AMOLED) low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) leakage current prevention |
| title | Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays |
| title_full | Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays |
| title_fullStr | Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays |
| title_full_unstemmed | Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays |
| title_short | Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays |
| title_sort | pixel circuit with leakage prevention scheme for low frame rate amoled displays |
| topic | Active-matrix organic light-emitting diode~(AMOLED) low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) leakage current prevention |
| url | https://ieeexplore.ieee.org/document/9001057/ |
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